A valve device is capable of precisely adjusting a flow rate variation due to aging, aging, etc. without using an external sensor. An adjusting actuator includes a piezoelectric element for adjusting the position of the operating member positioned at the open position, and the drive circuit of the adjusting actuator includes a detecting unit for detecting an electric signal related to the amount of strain generated in the piezoelectric element, and a control unit for controlling the adjusting actuator so that the opening degree of the flow path by the valve element becomes the target opening degree based on the electric signal related to the amount of strain of the piezoelectric element.

A particle collection device includes a collection sheet and a frame on which the collection sheet is mounted. The collection sheet includes a base sheet, a magnetic substance, and a metal protrusion disposed on the base sheet to be adjacent to the magnetic substance.

A valve device includes a valve body; a cylindrical member provided in an accommodation recess and communicating with the first flow path; a valve seat supported by the cylindrical member; a seal member interposed between the periphery of the opening of first flow path on the bottom surface of the accommodation recess and the lower end portion of the cylindrical member; an annular plate which is flexible, air-tightly or liquid-tightly fixed to an annular support portion formed on the inner peripheral surface of the accommodation recess, air-tightly or liquid-tightly fixed to an annular support portion formed on the outer peripheral surface of the cylindrical member and has a plurality of openings communicating with the second flow path; and a diaphragm that moves between an open position at which the diaphragm does not contact the valve seat and a closed position at which the diaphragm contacts the valve seat.

A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

Electronic device processing systems including an equipment front end module with at least one side storage pod are described. The side storage pod has a chamber including a top substrate holder and a bottom substrate holder. In some embodiments, an exhaust port is located at a midpoint between the top substrate holder and the bottom substrate holder. Methods and systems in accordance with these and other embodiments are also disclosed.

An apparatus and method for wet cleaning a gas stream has a housing with a gas inlet and a gas outlet, wherein, in the housing, there is at least a first washing segment that serves to clean the gas stream with a washing liquid and that is arranged in the flow path of the gas stream. Inside the housing of the apparatus, there is at least one fan that regulates air pressure along the flow path of the gas stream. A bypass channel for bypassing the flow path through the at least one washing segment as well as a regulator that is arranged in the bypass and that serves to discharge the gas stream being conveyed via the bypass channel are arranged inside the housing.

A substrate container system comprises a container body having a bottom face, a front opening that enables passage of a substrate, and a back opening opposing the front opening, the back opening having a width smaller than that of the front opening; and a back cover that covers the back opening and establishes sealing engagement with the container body, wherein the back cover comprises a first gas inlet structure that bendingly extends under the bottom face of the container body upon assembly; wherein the first gas inlet structure comprises a downward facing gas intake port opposing the bottom face of the container body.

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

Gas distribution faceplates are disclosed that feature clusters of gas passages extending from inlet gas ports on a first side thereof to outlet gas ports on a second side thereof. The gas passages may each have at least a portion thereof that is at an oblique angle with respect to a nominal centerline of the gas distribution faceplate, thereby allowing the inlet gas ports for a given cluster of gas passages to be tightly grouped together and the outlet gas ports for that cluster of gas passages to be more widely spaced apart. This allows for a large numbers of gas passages to be used, thereby allowing for a reduction of flow rate through each gas passage and an attendant decrease in gas passage erosion rate, while reducing or eliminating the effects of overlapping wear zones around each outlet gas port.

The present disclosure relates to the technical field of wafer cleaning, and in particular to a wafer cleaning device and a wafer cleaning system. The wafer cleaning device includes a liquid inlet pipe, a first liquid discharge pipe, a first valve and a liquid supply device, wherein the liquid inlet pipe has an inlet terminal and an outlet terminal; a wall of the liquid inlet pipe is protruded outward to form a protrusion, the protrusion having a cavity; one terminal of the first liquid discharge pipe is communicated with the cavity, while the other terminal thereof is communicated with a container; the first valve is arranged on the liquid inlet pipe and located between the protrusion and the outlet terminal; and, the liquid supply device is communicated with the inlet terminal of the liquid inlet pipe to import cleaning solution into the liquid inlet pipe.