There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container, wherein the gas injector includes at least one first injection hole installed along a longitudinal direction of the pipe in a section where the plurality of substrates is arranged, and configured to supply the gas, and a plurality of second injection holes having an area smaller than a flow path cross-sectional area of the pipe, and installed to be opened obliquely to the longitudinal direction at a tip of the pipe.

The present disclosure provides a method and an apparatus of controlling a semiconductor manufacturing device, a medium and a semiconductor manufacturing device. The method of controlling a semiconductor manufacturing device includes: receiving a control instruction, and cutting off or turning on a first airflow path; and when the first airflow path is cut off based on the control instruction, driving an air pumping terminal of an air pumping pipe to be connected to an air outlet terminal of an air intake pipe, and turning on a negative pressure generating device and pumping air from the air intake pipe; or when the first airflow path is turned on based on the control instruction, driving the air pumping terminal to be disconnected from the air outlet terminal of the air intake pipe, and turning off the negative pressure generating device and stopping pumping.

The substrate has a plurality of chip regions each being provided with a structure to be a power device, and is provided with a to-be-processed film. The thickness profile of the to-be-processed film in the radial direction is measured by scanning with the sensor in the radial direction while the substrate is rotated. The average thickness of the thickness profile is calculated. At least one radial position where the thickness profile has an average thickness is extracted as at least one candidate position. At least one of the at least one candidate position is determined to be at least one measurement position. Processing liquid is supplied from a nozzle onto the to-be-processed film of the substrate while the substrate is rotated. The sensor monitors the time-dependent change in the thickness of the to-be-processed film in at least one measurement position while the substrate is rotated.

Semiconductor processing systems and methods are provided in which an amount or concentration of a chemical in a chemical mixture contained in a tank is automatically controlled based on a sensed properties of the chemical mixture. In some embodiments, a semiconductor processing system includes a processing tank that is configured to contain a chemical mixture. A chemical sensor is configured to sense one or more properties of the chemical mixture. The system further includes an electrically controllable valve that is configured to adjust an amount of the first chemical in the chemical mixture based on the sensed one or more properties of the chemical mixture.

A purge controlling system includes a purge module and a control module. The purge module is arranged in the load port and is electrically connected with the control module. The purge module includes an air curtain unit, a flow control unit and a sensing unit. The control module controls the purge module to provide adequate gas flow of purge gas into the air curtain unit and form a gas curtain according to the displacement value of the door assembly.

A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

A diaphragm position of a valve may be detected and/or determined such that operation of the diaphragm may be monitored. A sensor included in the valve may generate sensor data that may be used to monitor the position of the diaphragm, which in turn may be used to determine a flow of a fluid through the valve. In this way, the sensor may be used to determine whether the diaphragm is properly functioning, may be used to identify and detect failures of the diaphragm, and/or may be used to quickly terminate operation of an associated deposition tool. This may reduce semiconductor substrate scrap, may reduce device failures on semiconductor substrates that are processed by the deposition tool, may increase semiconductor processing quality of the deposition tool, and/or may increase semiconductor processing yields of the deposition tool.

A component mounting system for mounting a component on a substrate, the mounting system comprising a component supplying unit configured to supply the component; a substrate holding unit configured to hold the substrate in an orientation such that a mounting face for mounting the component on the substrate is facing vertically downward; a head configured to hold the component from vertically below; and a head drive unit that, by causing vertically upward movement of the head holding the component, causes the head to approach the substrate holding unit to mount the component on the mounting face of the substrate.

An apparatus includes: a substrate holder including a base member and configured to hold a substrate so as to be spaced apart upward from the base member; a rotary driver configured to rotationally drive the substrate holder; a processing liquid nozzle configured to supply a processing liquid to the substrate; a liquid receiving cup configured to receive the processing liquid scattered from the substrate; a cup exhaust passage configured to suction an atmosphere in the liquid receiving cup; a purge gas nozzle configured to discharge a purge gas into a space formed between the substrate and the base member; a purge gas flow rate controller configured to control a flow rate of the purge gas discharged from the purge gas nozzle; and a controller configured to control at least an operation of the purge gas flow rate controller.

An annealing apparatus includes a heater plate and a cooler plate disposed in a chamber, a delivering robot, a sensor and circuitry. The delivering robot is configured to deliver a wafer between the heater plate and the cooler plate in the chamber. The sensor is located on the delivering robot and configured to output a first signal in response to a motion of the delivering robot. The circuitry is coupled to the sensor and configured to detect whether an abnormality of the delivering robot occurs according to the first signal.