There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

An apparatus for processing a substrate may include a drain box for receiving a solution drained in a predetermined process, a drain line for discharging the solution from the drain box to an outside, and at least one spray member for providing a gas and/or a liquid to block an air flowed into the drain box and/or to control a humidity in the drain box.

A vacuum pump, vacuum pump set and method for evacuating a semiconductor processing chamber is disclosed. The vacuum pump is configured for mounting to a semiconductor processing chamber to evacuate the chamber to pressures between 1 mbar and 5×10.sup.−2 mbar. The vacuum pump comprises: a rotor rotatably mounted within a stator. The rotor comprises a plurality of angled blades arranged along a helical path from an inlet to an outlet. The stator comprises a plurality of perforated elements arranged to intersect the helical path, the perforations allowing gas molecules travelling along the helical path to pass through the perforated elements. The rotor mounted on a magnetically levitated bearing; and the perforated elements located towards an inlet of the vacuum pump comprise a transparency of more than 40% and the perforated elements located towards an outlet of the vacuum pump comprise a transparency of more than 30%.

A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.

A semiconductor fabrication apparatus comprises a process chamber, an ozone supply that provides the process chamber with ozone, an oxygen supply that provides the ozone supply with a source gas of the ozone, and a plurality of impurity detectors disposed between the oxygen supply and the ozone supply. The impurity detectors detect an inactive gas in the source gas.

A substrate processing chamber includes a housing providing a process space; a spin apparatus provided in the housing; and a fluid spraying nozzle configured to spray fluid into the process space, wherein the spin apparatus includes: a spin chuck configured to support a substrate; a rotation driving part configured to rotate the spin chuck; and a weight sensor configured to measure a weight of the substrate supported on the spin chuck.

A gas circulation apparatus is applied to a pneumatic apparatus including a solenoid valve apparatus and a cylinder apparatus, and is connected in series between the solenoid valve apparatus and the cylinder apparatus. The gas circulation apparatus includes a valve core structure, a first circulation cavity, and a second circulation cavity. The valve core structure is configured to move in a first direction, so that compressed gas discharged from a first cylinder cavity of the cylinder apparatus and passing through the solenoid valve apparatus is collected and stored by the first circulation cavity, and a second cylinder cavity of the cylinder apparatus is supplied with compressed gas stored in the second circulation cavity together with the compressed gas supplied from the solenoid valve apparatus.

A substrate cleaning apparatus, includes a vaporizer configured to generate water vapor, a first heating part configured to heat a nitrogen gas to a first temperature, a second heating part configured to heat the nitrogen gas to a second temperature, wherein the second temperature is higher than the first temperature, and at least one cleaning chamber connected to the vaporizer, the first heating part, and the second heating part, wherein the at least one cleaning chamber is configured so that at least one substrate is exposed to the water vapor, the nitrogen gas having the first temperature, or the nitrogen gas having the second temperature under an atmospheric pressure.

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.