Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

A liquid chemical supply device, system and method capable of processing a gas having first and second canisters connected, respectively, to semiconductor manufacturing apparatus by way of first and second supply lines, to provide liquid chemicals stored therein to the semiconductor manufacturing apparatus; first and second push lines connected to the first and second canisters, respectively, and configured to provide a push gas to the first and second canisters to discharge the chemicals into the first and second supply lines, and a gas processing unit in fluid communication with the first supply line and the second push line, in order for the chemical in the first supply line containing a gas therein to be provided to and stored in the second canister through the second push line.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.

The present disclosure relates to the technical field of semiconductors, and provides a vacuum system, a low-pressure vacuum process device, and a cutoff member. The vacuum system includes: a vacuum pump; an exhaust pipeline, wherein one end of the exhaust pipeline is used to communicate with a chamber to be evacuated, and the other end of the exhaust pipeline communicates with the vacuum pump; and a cutoff member, wherein the cutoff member is connected to the exhaust pipeline, the cutoff member includes a filter portion and a carrier portion, the filter portion includes a passage, the carrier portion includes an accommodation groove, and the passage communicates with the accommodation groove.

A semiconductor processing system for delivering large capacity vaporized precursor from solid or liquid precursor source is disclosed. The system utilizes a carrier gas to feed the vaporized precursor to a remotely located process zone where multiple process modules are disposed. The system comprises a first and second buffer volumes configured to reduce pressure drop and increase delivery rates. A method for delivering a large capacity vaporized precursor to the remotely located process zone are also disclosed.

A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

A treatment liquid supply device and a wet treatment device with which an extremely small quantity of the treatment liquid can be accurately supplied, as a method for supplying a treatment liquid to an extremely small wafer of half inch size, including: a syringe that sucks and discharges the treatment liquid; a treatment liquid bottle that is filled with the treatment liquid; a suction hose that has one end connected to the treatment liquid bottle and the other end connected to the syringe, and sucks the treatment liquid inside the treatment liquid bottle to the syringe; a supply hose that has one end connected to an intermediate section of the suction hose and serves to supply, to the surface of the wafer, the treatment liquid discharged by the syringe; and a three-way solenoid valve that controls opening/closing of each of the suction and supply hoses.

The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a clean chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the clean chamber includes one or more fixtures in an interior volume therein for holding at least one component to be cleaned, and wherein the clean chamber includes a heater for heating the interior volume; and an expansion chamber fluidly coupled to the clean chamber via a release line for evacuating the clean chamber, wherein the release line includes a release valve to selectively open or close a flow path between the expansion chamber and the clean chamber, and wherein the expansion chamber includes a chiller and a vacuum port.

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.