A gas stream guiding device and a manufacturing equipment are provided. The gas stream guiding device is for use with a working bench having a top opening. The gas stream guiding device includes a casing, a gas inlet, a gas outlet, and a stream guiding part. The casing includes an inner space. The gas inlet is disposed on the casing, wherein a gas stream enters the inner space through the gas inlet from the side of the working bench. The gas outlet is disposed on the casing and is connected with the top opening, wherein the gas stream leaves the inner space from the gas outlet and enters the working bench. The stream guiding part is disposed in the casing and is located on the flow path of the gas stream, wherein at least a portion of the stream guiding part extends aside in the direction perpendicular to the gas inlet. The manufacturing equipment includes the gas stream guiding device and the working bench.

There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.

A substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a pipe connected to the nozzle unit and a processing liquid supply unit supplying the processing liquid; a charge amount control unit disposed at the pipe, including a filter unit charged with positive charges or negative charges, and including at least one of a control valve, controlling a flow rate of the processing liquid passing through an inside of the filter unit, and a power supply unit, applying a voltage to the filter unit, to control a charge amount of the processing liquid; and a control unit connected to the charge amount control unit.

A liquid trap tank and a liquid supply unit for the liquid trap tank are provided. The liquid trap tank includes a tank body which has an accommodating space formed therein to accommodate a liquid and has an inlet portion formed on one side and an outlet portion formed on an opposite side; and a liquid supply unit coupled to the inlet of the tank body to supply the liquid from the outside of the tank body to the accommodating space, wherein the liquid supply unit comprises an inlet pipe portion coupled to the inlet portion to introduce the liquid into the accommodating space and a flow directing portion connected to the inlet pipe portion and configured to induce a flow of the liquid to suppress generation of air bubbles due to a drop of the liquid passing through the inlet pipe portion.

Disclosed herein is a temperature actuated valve, including a stationary member and a movable member, wherein the stationary member is configured to receive the movable member. A first flow path is defined between an outer surface of the stationary member and an inner surface of a housing and a second flow path defined by and within the movable member. The temperature actuated valve further includes at least one temperature actuated member having a first end seated against a base of the stationary member and a second end seated against a base of the movable member. The temperature actuated valve further includes a bias member having a first end connected to the base of the stationary member and a second end connected to the base of the movable member, the at least one temperature actuated member configured to compress at a first temperature and expand at a second temperature.

A substrate processing apparatus includes a bake chamber, a chamber door that opens and closes an opening of the bake chamber, a first support plate in the bake chamber, a first partition wall, which partitions a space provided on the first support plate into first heat treatment spaces spaced apart from each other in a first horizontal direction, and extends in a second horizontal direction and a vertical direction, first heat treatment modules arranged in the first heat treatment spaces, a first exhaust duct extending in the first horizontal direction across the first heat treatment spaces, a first sealing bracket coupled to the first exhaust duct, a first horizontal packing configured to seal a gap between the first sealing bracket and the chamber door, and a first vertical packing configured to seal a gap between the first partition wall and the chamber door.

A method for controlling a temperature of a substrate support assembly is provided. A first direct current (DC) power is supplied to a heating element embedded in a zone of the substrate support assembly included in a processing chamber. A voltage is measured across the heating element. Similarly, a current is measured through the heating element. A temperature of the zone of the substrate support assembly is determined based on the voltage across the heating element and the current through the heating element. A temperature difference between the determined temperature of the zone and a target temperature for the zone is determined. A second DC power to deliver to the heating element is determined to achieve the target temperature based at least in part on the temperature difference. The second DC power is supplied to the heating element to cause the temperature of the zone to be modified to the target temperature.

A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.