Implementations of the present disclosure provides a wafer bonding method and system. The method comprises: providing a bonding relation which is used to indicate bonding between at least two wafer lots; acquiring basic information of wafer lots corresponding to the bonding relation according to the bonding relation; performing a first rule check on the basic information, and conveying the wafer lots to a bonding station after the check passes; updating the basic information of the wafer lots conveyed to the bonding station to obtain updated basic information; performing a second rule check on the updated basic information, and performing wafer bonding on the wafer lots conveyed to the bonding station according to the bonding relation after the check passes.

Disclosed herein is a method of transferring a wafer from a first tape that has been pressure-bonded to one surface of the wafer and also to a first frame having an opening with the wafer positioned therein, to a second tape that has been pressure-bonded to a second frame. The method includes a first-frame removing step of detaching the first tape from the first frame by pressing a portion of the first tape that lies between the first frame and the wafer, a second-frame pressure-bonding step of pressure-bonding the second tape pressure-bonded to the second frame to another surface of the wafer, a pressure-bonding force reducing step of reducing a pressure-bonding force of the first tape by imparting an external stimulus to the first tape, and a peeling step of peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

A wafer is positioned in an opening of a first frame. The wafer is pressure-bonded at one surface thereof to a first tape together with the first frame, onto a second tape pressure-bonded to a second frame. The wafer is processed by pressure-bonding the second tape, which is pressure-bonded to the second frame having an outer diameter smaller than an inner diameter of the opening of the first frame, to another surface of the wafer, cutting the first tape along an outer periphery of the second frame, imparting an external stimulus to the first tape to lower a pressure-bonding force with which the first tape is pressure-bonded to the one surface of the wafer, and peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

A method includes: vacuuming at least one area among a plurality of areas formed concentrically between a top face of the elastic film and the top ring body under a state where a bottom face of the substrate is supported by a support member and a top face of the substrate contacts a bottom face of the elastic film; measuring a flow volume of gas in an area located outside one or more areas to be vacuumed; determining whether the substrate is adsorbed to the top ring based on the flow volume of the gas; and after it is determined that the substrate is adsorbed to the top ring, separating the elastic film to which the substrate is adsorbed from the support member.

In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.

A method of processing a substrate is provided. The method includes mounting a substrate on a concave mounting surface of a mounting table and deforming a surface of the substrate into a concave shape; detecting, by a height sensor, a height of the surface of the substrate in a vertical direction; determining positions of a plurality of first focus points based on height data of the surface of the substrate, detected by the height sensor; and forming a first modification layer in the substrate by irradiating the plurality of first focus points with a laser beam.

In an embodiment an apparatus includes a receptacle configured to receive a wafer, a light port configured to emit light from a source of light so as to shine the light on an edge of the wafer, wherein the light port is an opening located on a surface of the receptacle and a light sensitive element configured to receive light that passed the edge of the wafer and to form a detection signal based on the received light, wherein the light port is located underneath the wafer.

A laser beam irradiation unit of a laser processing apparatus includes: a laser oscillator in which a repetition frequency is set so as to oscillate a pulsed laser having a pulse width shorter than a time of electronic excitation caused by irradiating the workpiece with a laser beam and oscillate at least two pulsed lasers within the electronic excitation time; a condenser that irradiates the workpiece held on the chuck table with the pulsed laser beams oscillated by the laser oscillator; and a thinning-out unit that is disposed between the laser oscillator and the condenser and guides the pulsed laser beams necessary for processing to the condenser by thinning out and discarding pulsed laser beams in a predetermined cycle.

A laser processing apparatus includes: a chuck table for holding a single-crystal SiC ingot on a holding surface thereof; a laser beam applying unit for applying a laser beam to the single-crystal SiC ingot held on the holding surface of the chuck table; and a camera unit configured to capture an image of the single-crystal SiC ingot held on the holding surface of the chuck table. The chuck table includes a porous material making up the holding surface and a glass frame made of a non-porous material and having a recess defined therein and receiving the porous material fitted therein, and a negative pressure transfer path for transferring a negative pressure to the porous material fitted in the recess.