A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.

An apparatus and a method forming a semiconductor structure are provided. The method includes receiving a substrate; mounting the substrate to a polishing head with a side of the substrate facing a polishing pad, the polishing pad comprising a first region and a second region; grinding the substrate against the polishing pad; and adjusting a temperature of the first region and a temperature of the second region.

A processing apparatus includes a holding table having a holding surface that holds a workpiece and is smaller than the workpiece, a processing unit that processes the workpiece held by the holding table, an imaging unit that images the workpiece held by the holding table, and a controller. The holding table has a reflecting unit that surrounds the holding surface and is allowed to be positioned below an edge of the workpiece held by the holding surface, and at least part of the reflecting unit is formed of a reflective component and is imaged by the imaging unit in a state where the edge of the workpiece is positioned above the reflective component.

A method for conveying a substrate from a first to a second apparatus is provided. Material is applied to the substrate when on the first apparatus. A substrate conveyance apparatus including first and second holding portions is used. As a first step, the substrate is transferred from a first apparatus placement surface to the substrate conveyance apparatus. The substrate is then conveyed from the first apparatus to the second apparatus. The substrate is then transferred from the first holding portion to the second apparatus. In the first step, raising the first holding portion in a state where the first holding portion is inserted in a space under the substrate causes the first holding portion to hold the substrate, and the second holding portion to hold a protection member by holding a holding and receiving portion provided on a protection member surface opposite to a protection member surface facing the substrate.

A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

There are provided a stage for cutting a substrate, and a substrate-cutting apparatus. The stage includes a supporting member for having the substrate mounted thereon, including a plurality of cell areas, and defining a groove line having a groove shape between the plurality of cell areas, and a first tube line inserted into the groove line to contact an inner wall of the groove line, and having an open upper portion.

A substrate treatment apparatus according to an embodiment includes a treatment tank to store a chemical solution to treat a substrate, a pipe having a discharge port through which an air bubble is discharged from a bottom of the treatment tank toward the substrate, and a rod body disposed between the discharge port and the substrate to divide the air bubble.

A laser processing device includes a stage; a laser irradiation unit; an image capturing unit; a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, determining whether or not a crack extending from the modified region is in a crack reaching state where the crack has reached a front surface side of the semiconductor substrate on the basis of a signal output from the image capturing unit, and deriving information related to adjustment of irradiation conditions of the laser irradiation unit on the basis of determination results.

A laser processing device includes a stage; a laser irradiation unit configured to irradiate the wafer with laser light; an image capturing unit configured to detect light propagated through a semiconductor substrate; and a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, deriving a position of a tip of an upper crack on a rear surface side, which is a crack extending from the modified region to the rear surface side of the semiconductor substrate, on the basis of a signal output from the image capturing unit having detected the light, and determining whether or not a crack reaching state has been realized on the basis of the position of the tip of the upper crack on the rear surface side.