When picking a die from an adhesive tape, a collet of a pick arm is positioned at a distance over the die, the die being mounted on a first surface of the adhesive tape. A flow of air is then generated onto a second surface of the adhesive surface opposite to the first surface for blowing the adhesive tape to displace the die towards a die-holding surface of the collet. Thereafter, the die is retained on the die-holding surface of the collet while the adhesive tape separates from the die.

A method of manufacturing an LED display panel includes holding an LED wafer on a first holding unit, holding a circuit board on a second holding unit, positioning electrodes of the board at positions corresponding to electrode layers of the wafer while a face side of the board and a face side of the wafer are facing each other, joining the electrode layers and the electrodes to each other by applying a laser beam having a wavelength absorbable by a reverse side of one of the board and the wafer, to the reverse side of the one of the board and the wafer, thereby heating at least either the electrode layers or the electrodes, and breaking the buffer layers by applying a pulsed laser beam having a wavelength transmittable through a substrate of the wafer, to the buffer layers through a reverse side of the wafer.

A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

A processing apparatus includes a chuck table including a plate-shaped holding component having a predetermined region transparent from one surface to the other surface, a processing unit that processes a workpiece, a first imaging unit disposed over the chuck table to acquire a normal image of the back surface side, and a second imaging unit disposed under the chuck table to acquire a normal image of the front surface side, a display device, and a control part that executes image processing of the normal image of either the back or front surface side to cause the normal image subjected to the image processing to be displayed on the display device in the state of being inverted in a predetermined direction in order to allow the orientation of the normal image of the back surface side to correspond with the orientation of the normal image of the front surface side.

The present invention aims at eliminating a need for a protective cover such as a bellows cover and improving a collection rate of machining scraps, and includes machining tables that are fixed at least in X and Y directions on a horizontal plane and hold a workpiece, a machining mechanism that machines the workpiece with a rotary tool using a machining liquid, a moving mechanism that linearly moves the machining mechanism at least in each of the X and Y directions on the horizontal plane, and a machining scrap storage unit that is provided below the machining tables and stores machining scraps generated by machining by the machining mechanism.

A substrate processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A separation facilitating layer and a laser absorption layer are formed on the second substrate in this order. The substrate processing method includes forming a separation modification layer by radiating laser beam to the laser absorption layer while generating a stress in the laser absorption layer; and separating the second substrate from the first substrate along a boundary between the second substrate and the separation facilitating layer.

The invention relates to a sawing device for forming saw-cuts into a semiconductor product, including: a carrier for holding the semiconductor product, a saw blade, a first position sensor for determining the position of the semiconductor product held by the carrier, a second position sensor for determining the position of the saw blade, and a control unit configured for controlling the relative movement of the saw blade and the carrier, wherein the sawing device further includes a reference for linking the position of the first position sensor to the position of the second position sensor, wherein the control unit is configured to process, with aid of the reference, the positions determined by the reference sensors into a position of the point on the free surface of the semiconductor product relative to the point on the cutting edge of the saw blade, and, based on this positional information, control the relative movement of the saw blade and the carrier. The invention further relates to a method for forming saw-cuts into a semiconductor product.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

A laser dicing system is disclosed. The laser dicing system includes a host device and a laser source. The host device reads and identifies a mark formed on a surface of a semiconductor structure. The laser source is coupled to the host device and is configured to generate a dicing laser energy to form a trench on the semiconductor structure. The dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark.