A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

A wafer adaptor ring assembly for adapting an adapted sized wafer for plasma dicing by a plasma etch chamber designed for dicing a designed sized wafer, which is larger than the adapted sized wafer is disclosed. The wafer adaptor ring assembly includes a primary wafer ring designed for plasma dicing the designed sized wafer by the plasma, an adhesive sheet attached to a bottom surface of the primary wafer ring, and an adapted sized wafer disposed on the adhesive sheet between the primary wafer ring and the adapted sized wafer. A method for forming the wafer adaptor ring assembly is also disclosed.

A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

A method of manufacturing a display apparatus includes preparing a panel with a panel layer displaying images, a first protection film on a first surface of the panel layer with a first adhesion layer, and a second protection film on a second surface of the panel layer with a second adhesion layer, disposing the panel on a stage, cutting the panel on the stage along a closed-curve line to a predetermined depth extending from the second protection film to at least a portion of the first adhesion layer, and separating a first portion of the panel inside the closed-curve line from a second portion of the panel outside the closed-curve line, such that the second portion is removed simultaneously with the entire first protection film according to a first boundary by the line and a second boundary between the panel layer and the first protection film.

An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

An apparatus for wafer bonding includes a transfer module and a plasma module. The transfer module is configured to transfer a semiconductor wafer. The plasma module is configured to apply a first type of plasma to perform a reduction operation upon a surface of the semiconductor wafer at a temperature within a predetermined temperature range to convert metal oxides on the surface of the semiconductor wafer to metal, and apply a second type of plasma to perform a plasma operation upon the surface of the semiconductor wafer at a room temperature outside the predetermined temperature range to activate a surface of the semiconductor wafer.

An imprint apparatus cures an imprint material supplied onto a substrate held by a substrate holder by bringing a mold held by a mold holder into contact with the imprint material. The imprint apparatus includes an adjuster to adjust a distance between the substrate holder and the mold holder for contact and separation between the imprint material and the mold, an energy supply tool to supply, to the imprint material, energy for curing the imprint material supplied onto the substrate held by the substrate holder, and a controller to control the adjuster and the energy supply tool. The controller controls the adjuster so as to start separation between the imprint material and the mold in a period during which the energy supply tool supplies the energy to the imprint material that is in contact with the mold.

A device and a method for the alignment of substrates. The device includes a first substrate holder for receiving a first substrate that has at least two alignment marks, a second substrate holder for receiving a second substrate that has at least two alignment marks, at least one alignment optic for detecting the alignment marks of the first and second substrates, and at least one positioning optic for detecting positioning marks, wherein the alignment marks of the first substrate and the alignment marks of the second substrate can be aligned with one another depending on the positioning marks. The method of alignment includes the steps of fixing the first and second substrates on respective first and second substrate holders, detecting alignment marks on the substrates, detecting positioning marks, and aligning the alignment marks of the substrates with one another in dependence on the positioning marks.

An alignment mechanism comprises a rotary unit 61 with a first rotary axis 61c, three power transmission mechanisms 62, and three alignment action units 63. Each power transmission mechanism 62 comprises a first arm 621 and a second arm 622. The first arm 621 includes a first end 621a pivotably supported at a corresponding one of three different positions P11 to P13, and a second end 621b on the opposite side of the first end 621a. The second arm 622 includes a second rotary axis 622c and is pivotably supported on the second end 621b of the first arm 621 at a position different from the second rotary axis 622c. The alignment action units 63 are connected to corresponding second arms. The second rotary axes 622c are at three positions P21 to P23 separated from the rotary unit 61 toward three different directions centered on the first rotary axis 61c.