An imaging unit of a processing apparatus includes a microscope, and an imaging element connected to the microscope and including a plurality of pixels that capture an image. A control unit has a target pattern storage section that stores a target pattern for performing pattern matching, and a rectilinear region detection section that detects a rectilinear region on the basis of an image from the imaging element, calculates a deviation angle between a direction of the rectilinear region detected by the rectilinear region detection section and a processing feeding direction, and adjusts a relative angle between the target pattern stored in the target pattern storage section and a characteristic pattern on a wafer, to perform the pattern matching.

A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

A method includes determining a first offset between a first alignment mark on a first side of a first wafer and a second alignment mark on a second side of the first wafer; aligning the first alignment mark of the first wafer to a third alignment mark on a first side of a second wafer, which includes detecting a location of the second alignment mark of the first wafer; determining a location of the first alignment mark of the first wafer based on the first offset and the location of the second alignment mark of the first wafer; and, based on the determined location of the first alignment mark, repositioning the first wafer to align the first alignment mark to the third alignment mark; and bonding the first side of the first wafer to the first side of the second wafer to form a bonded structure.

A reinforcement ring can be placed in a carrier head to abut an inner surface of a perimeter portion of a flexible membrane. The reinforcement ring has a substantially vertical cylindrical portion, a flange projecting outwardly from the bottom of the cylindrical portion, and a lip projecting outwardly from a top of the cylindrical portion. The flange projects outwardly farther than the lip.

A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

A method of forming a package structure includes the following steps. A first package structure is formed. The first package structure is connected to a second package structure. The method of forming the first package structure includes the following steps. A redistribution layer (RDL) structure is formed. A die is bonded to the RDL structure. The RDL structure is electrically connected to the die. A through via is formed on the RDL structure and laterally aside the die. An encapsulant is formed to laterally encapsulate the through via and the die. A protection layer is formed over the encapsulant and the die. A cap is formed on the through via and laterally aside the protection layer, wherein the cap has a top surface higher than a top surface of the encapsulant and lower than a top surface of the protection layer. The cap is removed from the first package structure.

An expanding apparatus for expanding an expansion sheet to which a workpiece including at least a ductile material is adhered. The expanding apparatus includes expanding means for expanding the expansion sheet. The expanding means includes a plurality of moving units that are each configured and arranged to move an associated holding unit, and wherein each of the holding units is configured and arranged to clamp and hold a portion of the expansion sheet. The apparatus also includes cooling/heating means with a plate having a contact surface for contacting the workpiece, and a Peltier element for cooling or heating the plate. Finally, the apparatus includes a polarity change-over means for changing over the polarity of current passed to the Peltier element, wherein the polarity change-over means is configured and arranged to be switched between one status in which the plate is cooled and another status in which the plate is heated.

A bonding apparatus configured to bond a first substrate and a second substrate includes a first holder configured to hold the first substrate; a second holder configured to hold the second substrate; a first imaging device provided at the first holder and configured to image the second substrate held by the second holder; a first light irradiating device provided at the first holder and configured to irradiate light to the second substrate when the second substrate is imaged; a second imaging device provided at the second holder and configured to image the first substrate held by the first holder; and a second light irradiating device provided at the second holder and configured to irradiate light to the first substrate when the first substrate is imaged. Each of the first light irradiating device and the second light irradiating device is connected to a first light source configured to irradiate white light.

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.