A sample holder according to the disclosure includes: for example, a plate-like ceramic substrate; a heat-generating resistor; a metallic member configured to cover another principal surface of the ceramic substrate; a bonding layer configured to bond the ceramic substrate and the metallic member; a lead terminal; a conduction section which is disposed inside the bonding layer and is configured to electrically connect the heat-generating resistor and the lead terminal; and a joining member configured to join the conduction section and the lead terminal. The joining member is covered with a low-thermal-conductivity member which is lower in thermal conductivity than the bonding layer.

Implementations of a packaging system may include a wafer; and a curvature adjustment structure coupled thereto where the curvature adjustment structure may be configured to alter a curvature of a largest planar surface of the wafer.

A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

In an embodiment an apparatus includes a receptacle configured to receive a wafer, a light port configured to emit light from a source of light so as to shine the light on an edge of the wafer, wherein the light port is an opening located on a surface of the receptacle and a light sensitive element configured to receive light that passed the edge of the wafer and to form a detection signal based on the received light, wherein the light port is located underneath the wafer.

A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.

The present invention improves versatility of a film thickness measuring device. The trigger sensor 220 includes a proximity sensor 222 and a dog 224, and outputs a trigger signal indicating that a polishing table 110 makes one revolution. The eddy current sensor 210 measures a film thickness of a subject to be polished 102 at a timing based on the trigger signal output from the trigger sensor 220. The dog 224 is disposed in an opposite region 250 located at the opposite side of a rotation axis C.sub.W of the top ring 116 with respect to a rotation axis C.sub.T of the polishing table 110. Further, the eddy current sensor 210 and the proximity sensor 222 are disposed at the polishing table 110 so as to be located in the opposite region 250 when the trigger signal is output from the trigger sensor 220.

A method for sawing a semiconductor wafer is provided. The method includes sawing the semiconductor wafer with a first dicing blade to form a first opening. The semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape. The first opening is formed in the upper portion of the substrate. The method also includes sawing the semiconductor wafer with a second dicing blade from the first opening to form a second opening under the first opening and in the middle portion of the substrate. The method further includes sawing the semiconductor wafer with a third dicing blade from the second opening to form a third opening under the second opening and penetrating the lower portion of the substrate, so that the semiconductor wafer is divided into two dies. The first dicing blade, the second dicing blade, and the third dicing blade have different widths.

A method for bonding a first substrate and a second substrate includes: forming a protrusion at a partial region of the first substrate; measuring a position of the first substrate after the protrusion is formed in the first substrate; and bonding the first substrate and the second substrate by contacting the protrusion of the first substrate with a surface of the second substrate to form a contact region and enlarging the contact region.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.