A cutting blade position detecting method using a cutting apparatus including a holding table that holds a workpiece, and a cutting unit in which a cutting blade for cutting the workpiece held by the holding table is mounted in a rotatable state, includes a groove forming step of causing the cutting blade to further cut into the workpiece including a first groove formed by causing the cutting blade to cut into the workpiece, to form the workpiece with a second groove of which one end portion in a width direction does not overlap with the first groove whereas another end portion in the width direction overlaps with the first groove, and a calculating step of calculating the lower end position of the cutting blade based on a length of the one end portion in the width direction of the second groove formed in the workpiece.

A method of manufacturing a stacked substrate by bonding a first substrate and a second substrate, including a step of determining, based on information about curving of each of the first substrate and the second substrate, whether or not the first substrate and the second substrate satisfy a predetermined condition, and, a step of bonding the first substrate and the second substrate if the predetermined condition is satisfied. The stacked substrate manufacturing method described above includes a step of estimating, based on the information, an amount of misalignment which occurs after the first substrate is bonded to the second substrate and the predetermined condition may include that the amount of misalignment is equal to or less than a threshold.

There is provided a processing method of a workpiece. In the processing method, a protective film including a water-insoluble resin is formed on the front surface of a workpiece and the workpiece on which the protective film is formed is processed. Furthermore, the protective film is deteriorated by supplying an organic solvent to the workpiece processed and the protective film is removed from the front surface of the workpiece by supplying cleaning water to the protective film deteriorated.

A conveying mechanism includes a suction part that has a suction pad and sucks and holds a target object by the suction pad, a bracket connected to the suction part through a joint that is swingable, an elastic component in which one end part is fixed to the suction part and the other end part is fixed to the bracket, a negative pressure control unit that controls generation of a negative pressure at the suction part, and a movement unit that moves the bracket. The elastic component permits a swing of the suction part according to tilt or deformation of the target object that is sucked and held and, when suction holding of the target object is released, the elastic component returns the orientation of the suction pad to a predetermined orientation when the suction pad is not sucking and holding the target object.

An apparatus includes a first and second stages. The first and second stages respectively hold a first and second substrates. The second stage being opposed to the first stage. A stress application portion applies a stress to the first substrate based on a first magnification value. A calculator calculates the first magnification value based on a flatness of the first substrate and a first equation. The first equation represents a relation between flatness of a third substrate, a second magnification value, and an amount of pattern misalignment between the third substrate and a fourth substrate bonded to the third substrate. A controller controls the stress application portion to apply a stress to the first substrate on the first stage based on the first magnification value while the first and second substrates are bonded to each other.

According to one embodiment, there is provided a semiconductor manufacturing apparatus including a rotatable substrate stage, a first measuring mechanism and a second measuring mechanism. On the rotatable substrate stage, a laminated substrate used for manufacturing a semiconductor device is placed. The laminated substrate is formed by a first substrate and a second substrate to be laminated to each other. The first measuring mechanism measures an edge of the first substrate and an edge of the second substrate from a first direction. The second measuring mechanism measures the edge of the first substrate and the edge of the second substrate from a second direction. The second direction is a direction different from the first direction in an angle to a normal of the first substrate.

A wafer cleaning apparatus includes a base, a roller installation table installed on the base, a wafer support unit disposed at the roller installation table and having a support roller for rotatably supporting an edge of a wafer, a pressing roller installed on the roller installation table and above the wafer support unit, and configured to press opposite surfaces of the wafer, and a driving unit providing a force in a direction, crossing a direction of a central axis of the pressing roller, so that a shape of the pressing roller is deformed. The pressing roller deformed by the driving unit applies a first pressure to a central portion of the wafer and a second pressure, different from the first pressure, to an edge portion of the water.

A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method includes the steps of arranging a substrate stack, formed from the first substrate and the second substrate and aligned on the contact surfaces, between a first heating surface of a first heating system and a second heating surface of a second heating system.

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

An apparatus for singulating a layer of material on a semiconductor substrate includes a chamber. The chamber is configured for supporting a semiconductor substrate attached to a carrier substrate, the semiconductor substrate can include a plurality of die formed as part of the semiconductor substrate and separated from each other by singulation lines and a layer of material disposed over a major surface of the semiconductor substrate. In some examples, the singulation lines terminate so that the layer of material extends over the singulation lines. The apparatus includes a pressure transfer vessel inside the chamber and a compression structure movably associated with the chamber. The compression structure can be configured so that the pressure transfer vessel is interposed between the semiconductor substrate and the compression structure. The compression structure and the pressure transfer vessel are adapted to apply pressure to the entire semiconductor substrate to singulate the layer of material that extends over the singulation lines.