A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units and a corresponding device for alignment and contact.

A suction member includes a base part (3) and a plurality of protrusions (2). The base part (3) includes a first surface (4). Each of the protrusions (2) includes a side surface (6) contiguous to the first surface (4) and a top surface (5) contiguous to the side surface (6). The side surface (6) has a plurality of projecting ridges (7) extending in a direction apart from the first surface (4).

An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

This disclosure relates to an adhesive dispense unit for a semiconductor die bonding apparatus. The adhesive dispense unit includes an adhesive dispense nozzle and a pin member; the pin member comprising a down stand portion and a sheath portion, and the down stand is reciprocateable within the sheath portion.

In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

A cutting device for a thin semiconductor wafer includes a laser light generator and a polygonal mirror structure. The laser light generator is used to provide a femtosecond laser light with a pulse width on a femtosecond order (10.sup.−15 second). The polygonal mirror structure is used to reflect the femtosecond laser light. The polygonal mirror structure has a plurality of reflective surfaces. The polygonal mirror structure rotates continuously with respect to the femtosecond laser light, such that the femtosecond laser light is sequentially and repeatedly reflected by the plurality of reflective surfaces and projected on a semiconductor wafer. The femtosecond laser light projected on a semiconductor wafer moves repeatedly along a same predetermined direction in a predetermined range during a predetermined time to groove or cut the semiconductor wafer.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of cutting the wafer by using a cutting apparatus to thereby divide the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyester sheet.

A cutting apparatus includes a cutting dust collection box that collects cutting dust and a cutting dust guide plate that is disposed on the downstream side in a processing feed direction relative to a chuck table and receives cutting water and the cutting dust that flow to the downstream side after cutting to guide the cutting water and the cutting dust to the cutting dust collection box. A cutting dust breaking unit that breaks the cutting dust into small pieces is disposed at a position onto which the cutting dust that flows from a plate-shaped cover drops over the cutting dust guide plate.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form division grooves in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing air to each device chip through the polyolefin sheet to push up each device chip, thereby picking up each device chip from the polyolefin sheet after performing the dividing step.

A processing apparatus includes a holding table. The holding table includes a frustoconical portion and a wafer holding portion formed on the upper surface of the frustoconical portion for holding the wafer. Light is applied from a light emitting member to the side surface of the frustoconical portion and next reflected on the side surface of the frustoconical portion. The light reflected is applied to the outer circumference of the wafer held on the wafer holding portion of the holding table to thereby image the outer circumference of the wafer by an imaging unit.