According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

There is provided a technique that includes performing a cycle a predetermined number of times, the cycle including: (a) executing a process recipe of processing a substrate by supplying a process gas to an interior of a process container that accommodates the substrate in a state in which the interior of the process container is heated; and (b) executing a cleaning recipe of cleaning the interior of the process container by supplying a cleaning gas to the interior of the process container that does not accommodate the substrate in the state in which the interior of the process container is heated, wherein a time from an end of (b) in the cycle until a start of (a) in a next cycle is set to be equal to or less than a time from an end of (a) in the cycle until a start of (b) in the cycle.

An exemplary apparatus includes a metal furnace tube having an open first end and an opposite second end. The metal furnace tube includes an inner chamber, a fluid inlet to intake a fluid into the inner chamber, and a fluid outlet to exhaust the fluid from the inner chamber, the inner chamber to support a plurality of substrates within the metal furnace tube. The apparatus includes a first base plate or flange back plate coupling the fluid inlet to the inner chamber; a second base plate or flange back plate coupling the fluid outlet to the inner chamber; and a furnace includes a heater to heat the metal furnace tube, the metal furnace tube being mounted within the furnace and the heater being disposed outside the metal furnace tube.

The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

Disclosed is a pump system for a semiconductor chamber includes a housing having a front chamber and a rear chamber, a roots-type rotor provided to the front chamber of the housing, a screw-type rotor provided to the rear chamber, a shaft member coupled through the roots-type rotor and the screw-type rotor, and a driving motor provided to the outside of the housing in such a way as to be axially connected to the shaft member to provide power for driving the rotors. A fluid pipe is provided to the outside of the housing to connect the front chamber and the rear chamber. The fluid pipe is provided with a heater and/or a cooler to heat or cool the fluid flowing through the fluid pipe.

A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.

Various embodiments of monitoring systems and methods are disclosed herein to monitor particulate accumulation within a bake chamber configured to thermally treat substrates, and determine when the bake chamber requires cleaning. Embodiments of the disclosed monitoring system may generally include one or more sensors to monitor particulate accumulation on one or more inside surfaces of a bake chamber and/or a bake chamber lid assembly, and a controller, which is coupled to receive a sensor output from the one or more sensors and configured to use the sensor output to determine when cleaning is needed. Various types of sensors including, but not limited to, optical sensors, and surface acoustic wave-based sensors may be used in the present disclosure to monitor particulate accumulation inside the bake chamber.