Semiconductor fabrication methods and semiconductor devices are disclosed. According to some aspects, a memory device includes a memory stack having interleaved a plurality of conductive layers and a plurality of insulating layers on a substrate, and a channel structure extending vertically in the memory stack. The channel structure includes a semiconductor channel extending vertically in the memory stack and conductively connected to a source structure. The semiconductor channel includes polysilicon, and a grain size of the polysilicon ranges from 100 nm to 600 nm.

Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.

Embodiments of an enclosed coating system according to the present teachings can be useful for patterned area coating of substrates in the manufacture of a variety of apparatuses and devices in a wide range of technology areas, for example, but not limited by, OLED displays, OLED lighting, organic photovoltaics, Perovskite solar cells, and organic semiconductor circuits. Enclosed and environmentally controlled coating systems of the present teachings can provide several advantages, such as: 1) Elimination of a range of vacuum processing operations such coating-based fabrication can be performed at atmospheric pressure. 2) Controlled patterned coating eliminates material waste, as well as eliminating additional processing typically required to achieve patterning of an organic layer. 3) Various formulations used for patterned coating with various embodiments of an enclosed coating apparatus of the present teachings can have a wide range of physical properties, such as viscosity and surface tension. Various embodiments of an enclosed coating system can be integrated with various components that provide a gas circulation and filtration system, a particle control system, a gas purification system, and a thermal regulation system and the like to form various embodiments of an enclosed coating system that can sustain an inert gas environment that is substantially low-particle for various coating processes of the present teachings that require such an environment.

A substrate processing apparatus includes a first reaction chamber including: a first heating unit, a first processing space, and a first transfer space disposed under the first processing space, a second reaction chamber including: a second heating unit, a second processing space, and a second transfer space disposed under the second processing space; a first sidewall and a second sidewall defining the first reaction chamber and the second reaction chamber, wherein the first sidewall is shared by the first reaction chamber and the second reaction chamber, and a cooling channel disposed in the first sidewall and the second sidewall such that a cooling efficiency of the first sidewall is higher than that of the second sidewall, wherein the first reaction chamber and the second reaction chamber are disposed adjacent to each other with the first sidewall therebetween.

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

A substrate processing system includes: first and second process tubes spaced apart from each other in a first axial direction to provide process spaces independent from each other; a substrate boat on which a plurality of substrates are multiply stacked and which is provided to each of process spaces of the first and second process tubes; and first and second boat elevation units provided to the first and second process tubes, respectively, to elevate the substrate boat, wherein each of the first and second boat elevation units includes an elevation shaft member disposed in a space between the first and second process tubes.

Systems and methods to improve an industrial heater are disclosed. The heater comprises a horizontal cylinder oriented parallel to the ground and may encase an interior recess running the length of the heater. The heater may be divided into a plurality of sections or zones. One or more mid-rings may support the structure of the heater, and may be disposed at the intersections of adjacent sections or zones. A plurality of interior boards and/or insulation layers may line the interior façade, and may be configured to overlap each other and/or interlock together. The interlocking structure may be absent of any gap or space to prevent heat loss from the interior recess. One or more heat strips may be configured in a sinusoidal pattern. The strips may be mirrored on the opposite side of the interior recess, and may be configured to elongate in the direction opposite of gravity.

The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber with the chuck-based device configured to clean the chamber, a loading port coupled to the chamber and configured to hold one or more wafer storage devices, and a control device configured to control a translational displacement and a rotation of the chuck-based device. The chuck-based device can include a based stage, one or more supporting rods disposed at the base stage and configured to be vertically extendable or retractable, and a padding film disposed on the one or more supporting rods.

The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.