A device for applying underfill material into a space between a substrate and a semiconductor chip is provided. The device includes a frame housing configured to cover at least an outer edge area of the semiconductor chip that is bonded to the substrate. The device also includes a sealant attached to the frame housing and configured to contact the outer edge area of the semiconductor chip. The device also includes an outlet made on the frame housing for evacuating the space; and an inlet made on the frame housing for injecting the underfill material to the space.

Apparatus and methods to process one or more wafers are described. A substrate is exposed to a plurality of process stations to deposit, anneal, treat and optionally etch a film in small increments to provide self-aligned growth of the film on a substrate surface.

A jig for manufacturing a semiconductor package includes a bottom piece and an upper piece. The bottom piece includes a base, a support plate, and at least one elastic connector. The support plate is located in a central region of the base. The at least one elastic connector is interposed between the support plate and the base. The upper piece includes a cap and outer flanges. The cap overlays the support plate when the upper piece is disposed on the bottom piece. The outer flanges are disposed at edges of the cap, connected with the cap. The outer flanges contact the base of the bottom piece when the upper piece is disposed on the bottom piece. The cap includes an opening which is a through hole. When the upper piece is disposed on the bottom piece, a vertical projection of the opening falls entirely on the support plate.

Embodiments of this application discloses a substrate processing apparatus comprising: a vacuum transfer module having a vacuum transfer space and an opening; a wall unit attached to the opening and including a first gate valve and a second gate valve; a substrate processing module attached to the wall unit and having a substrate processing space communicating with the vacuum transfer space via the first gate valve; and a ring stocker attached to the wall unit and having a storage space for storing at least one annular member used in a plasma processing module. Moreover, the apparatus further includes a transfer mechanism disposed in the vacuum transfer space and transfers a substrate between the vacuum transfer space and the substrate processing space through the first gate valve and also transfers at least one annular member between the vacuum transfer space and the storage space via the second gate valve.

Provided is a substrate processing apparatus in which parts are selectively lifted according to the purpose or subject of maintenance/repair during a maintenance/repair operation. The substrate processing apparatus includes: a chamber; a first cover and a second cover on the chamber; a lifting device connected to the first cover and configured to raise and lower the first cover; and a connection region. When the lifting device and the second cover are connected to each other via the connection region or the first and second covers are connected to each other via the connection region, the first and second covers are raised and lowered by the lifting device.

The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber, a slit valve configured to provide access to the chamber, a chuck disposed in the chamber and configured to hold a substrate, and a gas curtain device disposed between the chuck and the slit valve and configured to flow an inert gas to form a gas curtain. An example benefit of the gas curtain is to block an inflow of oxygen or moisture from entering the chamber to ensure a yield and reliability of the semiconductor manufacturing processes conducted in the chamber.

A valve member driving device capable of bidirectional movement includes: a main body with two gas chambers, a first gas-inlet opening, a first gas-inlet channel, a second gas-inlet opening, and a second gas-inlet channel; a first piston rod with a first flow passage; a second piston rod with a second flow passage; a first guide rod extending into the first flow passage at one end and having a gas socket and a gas hole in communication with the gas socket; a second guide rod extending into the second flow passage at one end and having a gas-guiding flow passage; a valve cylinder fixedly provided on the first piston rod and having a valve-cylinder gas chamber, an advance channel, a withdrawal channel, and a valve-cylinder piston rod; and a valve member fixedly provided on the valve-cylinder piston rod.

A wafer chuck includes a chuck body and a plurality of seal rings. The chuck body includes a carrying surface configured to receive a wafer and at least one vacuum hole disposed on the carrying surface. A ratio of a diameter of the carrying surface to a diameter of the wafer is substantially equal to greater than 45% and substantially equal to or smaller than 90%. The seal rings are disposed on the carrying surface and configured to physically contact with the wafer. The seal rings surround the vacuum hole.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

A method and apparatus for substrate processing and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies. The transfer chamber assembly and processing assemblies may include processing platforms for ALD, CVD, PVD, etch, cleaning, implanting, heating, annealing, and/or polishing processes. Processing chamber volumes are sealed from the transfer chamber volume using a support chuck on which a substrate is disposed thereon. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using a bellows assembly and a chuck sealing surface.