A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

A system comprises a process module, a pump, and an adapter plate. The process module processes a semiconductor substrate, has an opening at a lower end, and includes a poppet valve above the opening. The pump operates in conjunction with the poppet valve to evacuate gases from the process module. The adapter plate is arranged above the pump and below the opening at the lower end of the process module. The adapter plate includes an inner cavity coincident with the opening and an outer perimeter smaller than the lower end of the process module. The adapter plate includes a first set of bores arranged around the inner cavity and a second set of bores arranged along the outer perimeter. First fasteners fasten the pump to the adapter plate through the first set of bores. Second fasteners fasten the adapter plate to the process module through the second set of bores.

A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

An apparatus and a method for wet process on a semiconductor substrate are provided. The apparatus includes a process chamber (1005), a chuck (1002) for holding and positioning a semiconductor substrate (1001) disposed in the process chamber, a rotating driving mechanism (1004) driving the chuck to rotate, a chamber shroud (1006) disposed surrounding the process chamber, at least one vertical driving mechanism driving the chamber shroud to move up or down, a shielding cover (1007), at least one driving device (1008) driving the shielding cover to cover down or lift up, at least one dispenser module (1014) having a dispenser (1030) for spraying liquid to the surface of the semiconductor substrate. When the shielding cover covers above the process chamber, the chamber shroud is moved up to couple with the shielding cover, so as to seal the process chamber for preventing the liquid from splashing out of the process chamber.

The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element.

Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

A substrate support for supporting a substrate in a lithographic apparatus, the substrate support including: a support body configured to support the substrate; a main body separate from the support body and configured to support the support body, the main body including a thermal conditioner configured to thermally condition the main body and/or support body and/or substrate; and an extractor body surrounding the main body and the support body, the extractor body having an extraction channel configured to extract fluid from near a peripheral part of the substrate.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.

The present invention relates to a damper control system and a damper control method for controlling an opening degree of an exhaust damper connected to an exhaust duct. The damper control system (300) includes an exhaust damper (310), a first pressure sensor (311), and a controller (315) configured to control an opening degree of the exhaust damper (310). The controller (315) is configured to switch the opening degree of the exhaust damper (310) to an opening degree smaller than a full opening on condition that a shutter (217) is opened.