In a substrate processing apparatus (1), an enlarged sealed space (100) is formed by bringing a cup part (161) that forms a lateral space (160) around the outer periphery of a chamber (12) into contact with a chamber lid part (122) separated from a chamber body (121). A scan nozzle (188) is attached to the cup part (161) in the lateral space (160) and supplies a chemical solution onto a substrate after moving to above the substrate through an annular opening (81). During processing for cleaning the substrate and processing for drying the substrate, the scan nozzle (188) is housed in the lateral space (160) and an upper opening of the chamber body (121) is closed by the chamber lid part (122) to isolate the chamber space (120) from the lateral space (160) and seal the chamber space (120). Thus, the chamber space (120) can be isolated from the scan nozzle (188). This consequently prevents a mist or the like of the chemical solution supplied from the scan nozzle (188) from adhering to the substrate.

An apparatus and a method for handling a semiconductor substrate are provided. The apparatus includes a chuck table and a first flexible member. The chuck table includes a carrying surface, a first recess provided within the carrying surface, and a vacuum channel disposed below the carrying surface, and the chuck table is configured to hold the semiconductor substrate. The first flexible member is disposed within the first recess and includes a top surface protruded from the first recess, and the first flexible member is compressed as the semiconductor substrate presses against the first flexible member.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

Electronic device processing systems including an equipment front end module (EFEM) with a side storage pod are described. The EFEM includes an EFEM chamber and a recirculation duct. The side storage pod is fluidly coupled to the recirculation duct. The side storage pod includes an interior chamber and a side storage container disposed within the interior chamber. The side storage container is configured to receive one or more substrates from the EFEM chamber. The electronic device processing system further includes an environmental control system. The environmental control system is configured to circulate a purge gas between the EFEM chamber and the side storage pod via the recirculation duct.

A substrate processing system includes a processing container body having an opening, a lid which closes an opening, a mover for relatively moving the lid with respect to the opening to open and close the opening, and a lock mechanism which locks the lid to the processing container body. The lock mechanism includes an arm member and a locking member. The arm member is provided on one of the processing container body and the lid and extends toward the other when the processing container body is located at a position where the lid is separated from the processing container body. The locking member restricts a displacement of the arm member by being engaged with a part of the arm member. This part is located beyond the gap space when the lid is at the separated position.

System and method for decapsulation of plastic integrated circuit packages by providing a microwave generator, providing a Beenakker resonant cavity connected to the microwave generator, which cavity comprises a coupling antenna loop, providing the cavity with a tube or tubes for supply of plasma gas and etchant gas or gases and with means for igniting the plasma gas, and providing that the cavity is set at a predefined value of its Q factor by embodying the coupling antenna loop and/or a wire optionally attached to the coupling antenna loop in a metal or metal alloy, or providing that at least at part of its surface area the coupling antenna loop and/or the wire is coated with a metal or metal alloy different than copper and with a higher resistivity than copper.

A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

A processing system includes at least one processor having a tank for holding a process liquid. A clean assembly above the tank is provided with an upper housing having at least one upper housing spray nozzle, and a lower housing having at least one lower housing spray nozzle, with the lower housing below the upper housing. A door between the upper housing and the lower housing is movable via an actuator from an open position wherein a load port through the clean assembly is open, to a closed position wherein the load port is closed off. The door largely prevents liquids used in the upper housing from moving down into the process liquid in the tank, and may also improve gas flow in the system.

Provided is a heat treatment apparatus, which includes: a cylindrical quartz reaction tube having a furnace opening and a bottom flange at a lower portion thereof; a flange holding part configured to hold the bottom flange of the reaction tube; and a lid including a metal lid and a quartz lid supported by the metal lid, the quartz lid being configured to close the furnace opening of the reaction tube. The quartz lid is fixed onto the metal lid by a support ring. The support ring is brought into contact with a bottom surface of the flange holding part so that a gap is defined between the quartz lid and the bottom flange. A sealing member is arranged outward from the gap in a radial direction.

A transport module for loading and unloading a process module of a semiconductor production device includes a housing, which has a chamber that can be evacuated. The chamber has an opening that can be closed in a gas-tight manner by a closure device, which opens out into a first coupling duct associated with the transport module. The first coupling duct is connected with a flange plate using an elastic intermediate element, wherein the flange plate can be seated in a plane parallel, sealing manner on a flange plate of a second coupling duct associated with the process module. After opening the closure device, an evacuated loading and unloading duct to the process module is created. An inner and outer mounting section of the intermediate element is spaced apart from one another in the radial direction, with respect to the axis of the first coupling duct, by a deformation zone.