Patent classifications
H01L21/67132
Manufacturing method for semiconductor device
A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.
Semiconductor die singulation method using varied carrier substrate temperature
In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer. A support structure is used to heat and/or cool at least the first carrier-substrate while the localized pressure is applied.
Component-manufacturing film, component-manufacturing tool, and component-manufacturing method
Provided is a component-manufacturing film that includes a first region S1 and a second region S2 disposed so as to surround the region S1; the region S1 is formed of a base layer and an adhesive layer provided on one surface side of the base layer; the region S2 is formed of the base layer, the adhesive layer, and an additional layer affixed onto the layer. In the temperature range of 190° C. or lower, a tensile elastic modulus of the additional layer is equal to or greater than the tensile elastic modulus of the base layer. Further provided are a component-manufacturing tool and method, the latter including a component fixing step; a film placement step of performing placement so that the boundary between the region S1 and the region S2 is located inside with respect to an edge of the chuck table; a chucking step; and a heating step.
WAFER PROCESSING METHOD
A wafer processing method for divides a wafer into individual device chips along a plurality of division lines. The method includes forming a dividing groove along each division line formed on the front side of the wafer, the dividing groove having a depth corresponding to the finished thickness of each device chip, thinning the wafer to expose the dividing groove to the back side of the wafer, thereby dividing the wafer into the individual device chips, applying a liquid resin for die bonding to the back side of the wafer and next solidifying the liquid resin applied to the back side of the wafer, thereby forming a die bonding resin film having a predetermined thickness on the back side of each device chip, and isolating each device chip from the wafer.
Method and device for monitoring dicing tape tension
A method of monitoring a dicing tape tension is described. The method includes acquiring tension data indicative of the dicing tape tension by automated optical inspection of a dicing tape.
Wafer processing method
A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.
Workpiece-separating device and workpiece-separating method
A workpiece-separating device includes a holding member configured to detachably hold one of a workpiece or a supporting body of a laminated body and a light irradiation part configured to perform light irradiation on a separating layer, the holding member including: a stage facing one of the workpiece or the supporting body, a fixed supporting part projecting from the stage toward the laminated body and including a still suction pad immovable in a projection direction, and a movable supporting part projecting from the stage toward the laminated body and including a response suction pad that is movable in a projection direction and elastically deformable, a plurality of the fixed supporting parts and a plurality of the movable supporting parts disposed in a dispersed manner, and the plurality of response suction pads project toward the laminated body further than the plurality of still suction pads.
APPARATUS AND METHOD FOR PROCESSING SPUTTERED IC UNITS
A method for preparing a film carrier for sputtering of IC units placed thereon, the method comprising the steps of: providing a carrier of IC units; removing said units from the carrier; delivering said IC units to a flipper; inverting and delivering said units to a sputtering film frame; placing the units on said sputtering film frame in an array having a pre-determined clearance about adjacent units.
Apparatus for assembly of microelectronic devices
An apparatus including a carrier substrate configured to move a microelectronic device. The apparatus further includes a rotatable body configured to receive the microelectronic device. Additionally, the apparatus includes a second substrate configured to receive the microelectronic device from the rotatable body.
Unloading mechanism
An unloading mechanism for removing workpieces from a transporting film can include a bottom plate, a picking assembly, and a storage assembly. The picking assembly can include a driving member coupled to the bottom plate, a pressing member coupled to the driving member, and a picking member coupled to the pressing member. The pressing member can define a receiving hole along an axis. The picking member can include a connecting rod coupled to the bottom plate, and a suction member coupled to the connecting rod. The suction member can be coupled to the second end and protruding out of the pressing member. The storage assembly can include a base plate configured to support the transporting film, and a pressing plate stacked on the base plate and the transporting film.