A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.

A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

A method of patterning a substrate includes applying a first potential to a spray nozzle, applying a second potential to at least one first cell electrode among a plurality of cell electrodes on a first surface of the substrate, applying a third potential to at least one second cell electrode excluding the at least one first cell electrode among the cell electrodes, and applying a fourth potential to a second surface that is opposite to the first surface of the substrate.

Disclosed is a substrate processing apparatus that includes: a polishing table; an atomizer configured to spray a fluid to a polishing surface; a polishing liquid supply nozzle configured to drop a slurry at a position that corresponds to a slurry dropping position set on the polishing table and is lower than the top surface of the atomizer; a nozzle moving mechanism configured to move the polishing liquid supply nozzle above the atomizer between the retreat position set outside the polishing table and the slurry dropping position; and a nozzle tip retreating mechanism configured to bring the tip end of the polishing liquid supply nozzle into a retreated position above the top surface of the atomizer when the polishing liquid supply nozzle moves between the slurry dropping position and the retreat position.

A printer deposits material onto a substrate as part of a manufacturing process for an electronic product; at least one transported component experiences error, which affects the deposition. This error is mitigated using transducers that equalize position of the component, e.g., to provide an “ideal” conveyance path, thereby permitting precise droplet placement notwithstanding the error. In one embodiment, an optical guide (e.g., using a laser) is used to define a desired path; sensors mounted to the component dynamically detect deviation from this path, with this deviation then being used to drive the transducers to immediately counteract the deviation. This error correction scheme can be applied to correct for more than type of transport error, for example, to correct for error in a substrate transport path, a printhead transport path and/or split-axis transport non-orthogonality.

Embodiments of the inventive concept described herein relate to an apparatus and method for removing an adhesive exposed to the outside from an object being processed. The apparatus for removing the adhesive exposed to the outside from an edge region of the object being processed, in which the object has a patterned substrate and a support plate bonded together by the adhesive, The cover liquid nozzle dispenses the cover liquid onto a cover area of a top surface of the object other than the exposed area, and the controller controls the cover liquid dispensing member to adjust a flow rate of the cover liquid to cause a removal rate of the adhesive to remain constant.

A fluid supply device and a fluid supply method capable of stably supplying a supercritical fluid includes a fluid supply device for supplying a fluid in a liquid state before being changed to a supercritical fluid toward a processing chamber. The fluid supply device comprises a condenser that condenses and liquefies a fluid in a gas state, a tank that stores the fluid condensed and liquefied by the condenser, a pump that pressure-feeds the liquefied fluid stored in the tank toward the processing chamber, and a heating means provided to a flow path communicating with a discharge side of the pump and for partially changing the liquid in the flow path to a supercritical fluid.

A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

A developing treatment apparatus for performing a developing treatment on a treatment object substrate. The developing treatment apparatus includes: a rotating and holding part that holds and rotates the treatment object substrate; a discharger that discharges a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer that supplies ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

A laser processing machine includes a condenser and a water pillar forming unit. The condenser condenses a laser beam emitted from a laser oscillator and irradiates it to a workpiece held on a chuck table. The water pillar forming unit is disposed on a lower end of the condenser and is configured to form a thread-shaped water pillar on a front side of the workpiece. The laser oscillator includes a first laser oscillator, which emits a first laser beam having a short pulse width, and a second laser oscillator, which emits a second laser beam having a long pulse width. After the laser beams emitted from the first and second laser oscillators have transmitted through the thread-shaped water pillar formed by the water pillar forming unit and have been irradiated to the workpiece, a plasma occurred in the water pillar forming unit applies processing to the workpiece.