A vacuum exhaust system which exhausts gas from chambers and which comprises a plurality of branch channels for the exhaustion of the gas from the chambers, a main pipeline in the form of a confluence of the plurality of branch channels, channel open-close valves fitted to correspond with each of the said plurality of branch channels, a channel-switching valve connecting the main channel and a plurality of selection channels and allowing flow between the main channel and any one of the plurality of selection channels, a first pump which functions as a gas exhaust means in the molecular flow region of the gas and is fitted to one of the plurality of branch channels, and second pumps which function as gas exhaust means in the viscous flow region of the gas and are fitted to the plurality of selection channels.

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

A semiconductor manufacturing system has a turbine disposed inside a semiconductor manufacturing clean room. A controller is disposed outside the semiconductor manufacturing clean room and is coupled to the turbine through a first cable. A first computer is coupled to the controller through a second cable. The first computer has a web server configured to communicate with the controller via the second cable. A second computer is disposed in the semiconductor manufacturing clean room and is connected to the web server of the first computer. The web server hosts a web page including a reset button configured to issue a reset command to the controller. The web page also displays a status of the turbine.

A method includes receiving, from sensors, sensor data associated with processing a substrate via a processing chamber of substrate processing equipment. The sensor data includes a first subset received from one or more first sensors and a second subset received from one or more second sensors, the first subset being mapped to the second subset. The method further includes identifying model input data and model output data. The model output data is output from a physics-based model based on model input data. The method further includes training a machine learning model with data input including the first subset and the model input data, and target output data including the second subset and the model output data to tune calibration parameters of the machine learning model. The calibration parameters are to be used by the physics-based model to perform corrective actions associated with the processing chamber.

A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

A clustered reaction system includes multiple reaction devices, a cooling device and a gas supply device. Each of the reaction devices includes a reaction tank unit defining a reaction space, multiple through holes extending through the reaction tank unit, a heat exchange module including a heat exchange passage surrounding the reaction tank, and an injection module extending through one of the through hole. The cooling device is connected to the heat exchange passages of the reaction devices for supplying a coolant into the heat exchange passages. The gas supply device is communicated fluidly with one of the through holes of each of the reaction devices for supplying a gas to the reaction devices.

A system for maintaining a device in a semiconductor manufacturing environment that includes a controller configured to determine a distance travelled by the device within the semiconductor manufacturing environment, where the device has a feature that selectively engages a carrier configured to carry a semiconductor wafer such that the device moves the semiconductor wafer to different processing stations within the semiconductor manufacturing environment. The system also includes an inspection component configured to inspect the device responsive to the distance travelled by the device exceeding a distance threshold, a repair component configured to repair the device responsive to a repair indication from at least one of the controller or the inspection component, and a cleaning component configured to clean the device responsive to a clean indication from at least one of the controller or the inspection component.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

The present disclosure generally provides for a system and method for measuring one or more characteristics of one or more substrates in a multi-station processing system using one or more metrology modules at a plurality of metrology stations. In one embodiment, a system controller is configured to cause the multi-station processing system to perform a method that includes processing a plurality of substrates at a plurality of processing stations, advancing one or more of the plurality of substrates to a respective metrology station, measuring one or more characteristics of the plurality of substrates at the respective metrology station, determining a processing performance metric based on the one or more characteristics, comparing the processing performance metric to a tolerance limit to determine if an out of tolerance condition has occurred, and adjusting one or more processing parameters when it is determined that an out of tolerance condition has occurred.

An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region with first plasma generated from a first process gas containing a carbon monoxide gas. The etching method further includes (c) etching the second region.