An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.

Various embodiments of monitoring systems and methods are disclosed herein to monitor particulate accumulation within a bake chamber configured to thermally treat substrates, and determine when the bake chamber requires cleaning. Embodiments of the disclosed monitoring system may generally include one or more sensors to monitor particulate accumulation on one or more inside surfaces of a bake chamber and/or a bake chamber lid assembly, and a controller, which is coupled to receive a sensor output from the one or more sensors and configured to use the sensor output to determine when cleaning is needed. Various types of sensors including, but not limited to, optical sensors, and surface acoustic wave-based sensors may be used in the present disclosure to monitor particulate accumulation inside the bake chamber.

A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.

In a substrate processing method, a substrate with a pattern including a plurality of structures is processed. The substrate processing method includes a step of increasing hydrophilicity of respective surfaces of the structures, by executing predetermined processing on the structures with a non-liquid substance, from that before execution of the predetermined processing; and a step of supplying a processing liquid to the structures after the step of increasing hydrophilicity.

A substrate processing system includes a first substrate processing chamber, a first substrate transfer chamber connected to the first substrate processing chamber, a second substrate processing chamber, and a second substrate transfer chamber connected to the second substrate processing chamber. The substrate processing system further includes a buffer chamber connected between the first substrate transfer chamber and the second substrate transfer chamber, the buffer chamber having at least one substrate holder. At least a part of the buffer chamber and at least one of the first substrate transfer chamber or the second substrate transfer chamber are vertically overlapped with each other.

A substrate processing apparatus includes a substrate holding unit which holds a substrate horizontally, a processing liquid supplying unit which has a processing liquid nozzle discharging a processing liquid and supplies the processing liquid to an upper surface of the substrate, and a moving unit which moves the processing liquid supplying unit between a process position at which the processing liquid nozzle faces the upper surface of the substrate and a retreat position at which the processing liquid nozzle retreats from positions at which the processing liquid nozzle faces the upper surface of the substrate, wherein the processing liquid supplying unit includes a first flow path which is formed in the processing liquid nozzle, the first flow path having one end part and the other end part that face acentralregion of the substrate and a peripheral region of the substrate, respectively, in a state where the processing liquid supplying unit is positioned at the process position, a second flow path which extends as turning back from the one end part and supplies the processing liquid to the one end part, and a plurality of discharge ports which are formed in the processing liquid nozzle, are arranged along a direction in which the first flow path extends, and discharge the processing liquid in the first flow path to the upper surface of the substrate.

A semiconductor processing system and a method for assembling such a system in a room of a semiconductor fabrication plant. The system comprises an equipment module and a pedestal. The equipment module may be movable over the pedestal to bring the equipment module in an end position and may have a plurality of stop surfaces. The method comprises placing the pedestal in the room, placing two stops on the pedestal and positioning the two stops relative to reference elements in the room, and connecting the positioned stops to the pedestal so that the positions thereof in the X-direction and Y-direction are fixed. The equipment module may be moved over the pedestal until the stop surfaces of the equipment module abut against the stops so as to position the equipment module in the X-direction and Y-direction relative to the reference elements.

A clustered reaction system includes multiple reaction devices, a cooling device and a gas supply device. Each of the reaction devices includes a reaction tank unit defining a reaction space, multiple through holes extending through the reaction tank unit, a heat exchange module including a heat exchange passage surrounding the reaction tank, and an injection module extending through one of the through hole. The cooling device is connected to the heat exchange passages of the reaction devices for supplying a coolant into the heat exchange passages. The gas supply device is communicated fluidly with one of the through holes of each of the reaction devices for supplying a gas to the reaction devices.

There is provided a technique that includes: displaying a recipe editing screen including at least a selection screen area that displays a parameter list for selection of parameters included in a recipe of a substrate processing apparatus, and a parameter editing screen area that edits the parameters; receiving a selection operation that selects an editing target parameter from the parameter list; displaying, on the parameter editing screen area, in an editable manner, a timing chart that is changeable at a time of each process in a series of processes included in a substrate processing process; and editing the editing target parameter by receiving an operation instruction to edit the timing chart displayed on the parameter editing screen area and changing the timing chart according to the operation instruction.