The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P.sub.1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P.sub.1) to a second pressure (P.sub.2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

A substrate is held in a substrate holder and accommodated in a treatment chamber. A positive electrode panel is arranged opposite to a surface of the substrate. Process gas is sent from a blower panel, toward the positive electrode panel and the substrate. A positive electrode of a high-frequency power source is connected to the positive electrode panel, and a negative electrode of the high-frequency power source is connected to the blower panel, to apply a high-frequency voltage. The process gas passes between the positive electrode panel and the blower panel which is the negative electrode, so that plasma is generated. The generated plasma removes contaminants on the surface of the substrate.

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Methods and apparatus to control zone temperatures in a solar cell production system are disclosed. An example furnace to fire photovoltaic cells includes: a plurality of zones comprising firing elements configured to fire a metallization layer of photovoltaic cells by heating the photovoltaic cells in the zones; one or more belts configured to transport photovoltaic cells through a sequence of the plurality of zones; a user interface comprising one or more input devices; and control circuitry configured to: control the firing elements for the plurality of zones; and modify a configuration of two or more of the plurality of zones based on input received via the input device.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

The present invention relates to a substrate supporting member and a substrate processing method. A gas flow path supplying a heat transfer gas to a rear surface of a substrate is provided in the substrate supporting member according to an embodiment of the present invention. Furthermore, a gas flow restricting member restricting gas flow to a different extent from each other according to a direction of the gas flow is provided at the gas flow path or at an external heat transfer gas supply pipe connected to the gas flow path. According to the present invention, by providing the gas flow restricting member restricting the gas flow to a different extent from each other according to the direction of the gas flow, there are effects of minimizing the time required for exhausting the heat transfer gas while preventing the arcing from occurring in a heat transfer gas flow path.

In some examples, an array sensor temperature control system is provided. The system may include an array sensor for generating a two-dimensional image, the two-dimensional image including a plurality of pixels or cells indicative of a temperature of a monitored component; a controller for controlling a heating or cooling device to adjust the temperature of the monitored component; and an array sensor controller activated by a power source and being in communication with the array sensor and controller.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.