An information processing apparatus executes a simulation of a process state being executed in a semiconductor manufacturing apparatus using a simulation model of the semiconductor manufacturing apparatus. The information processing apparatus includes: a physical sensor data acquisition unit that acquires physical sensor data measured at the semiconductor manufacturing apparatus that executes a process according to a process parameter; and a simulation execution unit that executes a simulation by the simulation model according to the process parameter including the physical sensor data, and calculate virtual sensor data and virtual process result data. The physical sensor data acquired by the physical sensor data acquisition unit includes a temperature of a gas introduced into the semiconductor manufacturing apparatus that executes the process.

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

An optical heating device includes a heating light source unit having a plurality of planar light source areas in each of which a light source is arranged, and a controller configured to control light output of the light source. The controller includes a storage section that stores temperature distribution characteristic information describing a relation between a relative ratio of the light output of each light source and temperature distribution on a main surface of a tabular test piece, when light from the heating light source unit is irradiated toward the tabular test piece; and an output controller that changes a ratio of the light output based on the temperature distribution characteristic information, in order to bring the temperature distribution of a main surface of an object to be heated obtained when the light is irradiated under a predetermined light output for distribution measurement closer to a desired temperature distribution.

A control method of a film forming apparatus includes (a) acquiring a first temperature measured by a first temperature sensor in a tubular member in a processing container of the film forming apparatus; (b) calculating a first power to be output to a heating unit disposed in the processing container; (c) acquiring a second temperature measured by a second temperature sensor provided outside the tubular member in the processing container; (d) calculating a second power to be output to the heating unit; (e) calculating a predicted value of the second temperature at a predetermined time ahead, from the second temperature based on a prediction model; (f) outputting either the first power or the second power to the heating unit according to the predicted value of the second temperature; and (g) repeating (a) to (f) in a predetermined cycle.

The present invention provides a substrate treating apparatus including: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a treatment liquid to the substrate supported on the support unit; and a heating unit for heating any one of the first pattern and the second pattern.

The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

A semiconductor manufacturing apparatus includes: a gas introduction pipe connected to a processing container of the semiconductor manufacturing apparatus in order to introduce a gas into the processing container; and a temperature sensor provided in the gas introduction pipe in order to measure a temperature of a gas in the gas introduction pipe.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

An apparatus for manufacturing a semiconductor device includes a base portion, a bonding stage arranged on the base portion and having a placement surface for placing a substrate; and one or more connecting members which connect the base portion and the bonding stage, wherein at least one of the one or more connecting members is a connecting plate that deflects following the expansion and contraction of the bonding stage in the plane direction caused by a temperature change.

Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.