A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.

A holding device includes: a plate-shaped member having a first surface approximately orthogonal to a first direction; heat generating resistors and temperature measuring resistors disposed in respective segments formed by virtually dividing at least part of the plate-shaped member, the segments being arranged in a direction orthogonal to the first direction; and an electricity supply section that forms electricity supply paths for the heat generating resistors and the temperature measuring resistors. The holding device holds an object on the first surface of the plate-shaped member. The position of the temperature measuring resistors in the first direction differs from the position of the heat generating resistors in the first direction. A specific temperature measuring resistor that is at least one of the temperature measuring resistors includes a plurality of resistor elements disposed at different positions in the first direction and connected to one another in series.

A substrate processing apparatus includes a rotary table configured to hold and rotate a substrate; an electronic component provided at the rotary table and configured to be rotated along with the rotary table; a first electrode unit provided at the rotary table and configured to be rotated along with the rotary table, the first electrode unit comprising multiple first electrodes electrically connected to the electronic component via multiple first conductive lines; an electric device configured to perform a power supply to the electronic component and a transmission/reception of signals; a second electrode unit comprising multiple second electrodes electrically connected to the electric device via multiple second conductive lines and arranged at positions respectively corresponding to the multiple first electrodes to be brought into contact with the multiple first electrodes; and an electrode moving device configured to connect/disconnect the first electrode unit to/from the second electrode unit.

A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

The present disclosure discloses a film deposition method in furnace tube, and a semiconductor device. The film deposition method in furnace tube includes: providing a furnace tube, a process chamber in the furnace tube being divided into a plurality of process regions in the top-bottom direction, a plurality of temperature controllers being in one-to-one correspondence to the plurality of process regions to separately control the temperature of the plurality of process regions; providing a substrate, performing a deposition process of a film on the substrate, the temperature controllers being controlled so that the set deposition temperatures of the process regions gradually decrease in a gradient in the top-to-bottom direction; and performing an annealing process, the temperature controllers being controlled so that the set annealing temperatures of the process regions gradually increase in a gradient in the top-to-bottom direction.

A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.