Embodiments of the present application provide a monitoring wafer and a monitoring system. The monitoring wafer comprises a substrate, the substrate having a first surface that is configured to face a wafer carrier and fixed to the wafer carrier; and a pressure detection device, located on the substrate and configured to obtain pressure on the first surface.

A transport device inspection system includes a plurality of transport devices configured to move along a transport path, a diagnostic server configured to create inspection schedule information for the plurality of transport devices, an inspector configured to receive the inspection schedule information from the diagnostic server and to sequentially inspect the plurality of transport devices in accordance with the inspection schedule information, and a transport device controller configured to receive the inspection schedule information from the inspector and to control the plurality of transport devices to sequentially move to an inspection position in accordance with the inspection schedule information.

Exemplary diagnostic wafers for a semiconductor processing chamber may include a wafer body defining a plurality of recesses. The diagnostic wafers may include at least one data logging puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one battery puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one sensor puck positionable within one of the plurality of recesses.

A substrate processing apparatus includes an indexer block and a processing block adjacent to the indexer block in a lateral direction of the indexer block. A plurality of processing block layers are stacked in an up-down direction in the processing block. The indexer block includes a container holding portion and a first transfer robot that transfers a substrate between the substrate container held by the container holding portion and the processing block. Each of the processing block layers includes a plurality of processing units, a substrate placing portion, a dummy-substrate housing portion, and a second transfer robot that transfers a substrate between the substrate placing portion and the plurality of processing units and that transfers a dummy substrate between the dummy-substrate housing portion and the plurality of processing units.

Provided are method for managing chip manufacturing equipment, apparatus, electronic device and storage medium. The method incudes: determining, for each furnace tube device in target area, processing precision of the furnace tube device, through a heating uniformity result of the furnace tube device, processing test result of test piece, and factory parameters and marking a processing precision label; determining, when it is detected that a first rule is set in first furnace tube device, a second furnace tube device having device capability same as the first furnace tube device, and determining a target second furnace tube device having processing precision label same as that required by the first rule; determining priority synchronization sequence of the target second furnace tube device according to the processing precision of the target second furnace tube device; and synchronizing the first rule to the target second furnace tube device according to the priority synchronization sequence.

Method for maximizing the reaction volume in a slurry phase reactor by determining the ratio (f) between the height of the foams (H.sub.f) and the height of the reactor (H.sub.R) through an algorithm defining the gas hold-up in three zones, a first lower zone in which a bubble regime is established, a second intermediate zone where there can be the presence of foams, a third zone situated in the upper hemispherical part in which the multiphase mixture is accelerated until it reaches outlet conditions, the average gas hold-up being given by the weighted average of each of the three gas hold-ups of the three zones, characterized in that it uses nuclear densimeters positioned inside the reactor at different heights and comprises: measuring, for each nuclear densimeter used, gas density values, relating to different gas and/or slurry velocities, which correspond through said algorithm to calculated gas hold-up values, revealing, with a calculated gas hold-up of less than 40%, the absence of foams at least up to the height at which the densimeter is positioned, whose density measured corresponds to said gas hold-up, with a calculated gas hold-up higher than 70%, the presence of foams starting at least from the height of the reactor in which the densimeter is positioned, whose density measured corresponds to said gas hold-up, finally, determining through said algorithm, the ratio f and the extension in height of the possible presence of foams, calculating the consequent height H.sub.f.

A method of operating an article transport system includes deriving a predicted transport request time-point of a target apparatus from pre-collected operation data of the article transport system, calling a transport vehicle of the article transport system at a time-point prior to the derived predicted transport request time-point, and moving the called transport vehicle to the target apparatus.

A substrate processing system for sequentially processing substrates includes processing chambers, a transfer unit, and a control unit controlling the processing chambers and the transfer unit. The control unit includes a transfer control unit controlling an operation of the transfer unit, a transfer order setting unit setting a transfer order of substrates to the processing chambers, an accumulation unit for accumulating a film thickness of a formed thin film or the number of processed substrates after completion of previous cleaning or previous pre-coating in the processing chambers, a processing chamber priority determination unit for determining priority of processing the substrates in the processing chambers based on predetermined rules, and an execution instruction unit for executing conditioning in the processing chambers. The control unit prevents the substrates from being simultaneously processed in all processing chambers during one cycle of executing conditioning once in each of the processing chambers.

A substrate processing method which can increase the yield by reprocessing a substrate whose processing has been interrupted by a processing interruption command during a substrate processing is disclosed. A substrate processing method performs a predetermined processing of a substrate while sequentially transporting the substrate to a plurality of processing sections according to a preset recipe. The substrate processing method includes processing a substrate in one of the processing sections; interrupting the processing of the substrate by a processing interruption command during processing of the substrate; setting the substrate whose processing has been interrupted in a standby state; and customizing the recipe and performing reprocessing of the processing-interrupted substrate according to the customized recipe, or performing reprocessing of the processing-interrupted substrate according to a preset recipe for reprocessing.

A method and a device for stringing together objects in transport systems, preferably in coating systems, for adjusting the distance between two objects, preferably substrates or substrate holders, being arranged one behind the other, wherein the front object moves at a process speed v.sub.p in the transport system and the rear object is at an undefined distance from the front object. The method comprises the following steps: (a) accelerating the rear substrate to an initial speed v.sub.x>v.sub.p; (b) detecting an increase in the driving torque when the rear substrate moves against the front substrate; (c) delaying the rear substrate by a predetermined value in order to establish a predetermined distance a.sub.p from the front substrate; and (d) adjusting the speed of the rear substrate to the process speed v.sub.p.