Patent classifications
H01L21/67288
METHOD FOR MONITORING ABNORMAL SENSORS DURING FABRICATION OF SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE AND STORAGE MEDIUM
The disclosure provides a method for monitoring abnormal sensors during fabrication of a semiconductor structure, an electronic device and storage medium. The method includes: measurement data of a wafer passing through different measurement sites are acquired; a plurality of measurement data included in each measurement site are input to a first classifier to select a first plurality of measurement sites; a plurality of measurement data corresponding to the first plurality of selected measurement sites are input to second and third classifiers to select a second plurality of measurement sites; the measurement data corresponding to the plurality of measurement sites are input to the first, second and third classifiers respectively, to select a plurality of target sensors; and the score of each target sensor group is obtained, and a plurality of target sensors in the target sensor group with the highest score are defined as abnormal sensors.
METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.
HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.
METHOD OF INSPECTING FLATNESS OF SUBSTRATE
A method of inspecting flatness of substrate is provided and includes providing a substrate. N first inspecting points are selected from the surface of the substrate along a first straight line, where the coordinate of the i-th first inspecting point is (X.sub.i,Y.sub.i,Z.sub.i). By using a formula “D=Σ.sub.i=1.sup.N−1√{square root over ((X.sub.i+1−X.sub.i).sup.2+(Y.sub.i+1−Y.sub.i).sup.2+(Z.sub.i+1−Z.sub.i).sup.2)}”, a first measurement length D is calculated. By using a formula “F=(D−S)/S”, a first flatness index F is calculated. S is the horizontal distance between 1.sup.st first inspecting point and N-th first inspecting point. When the first flatness index F is larger than a first threshold, the substrate is determined to be unqualified.
Method of automatically focusing a charged particle beam on a surface region of a sample, method of calculating a converging set of sharpness values of images of a charged particle beam device and charged particle beam device for imaging a sample
A method of automatically focusing a charged particle beam on a surface region of a sample is provided. The method includes acquiring a plurality of images for a corresponding plurality of focusing strength values; calculating a plurality of sharpness values based on the plurality of images, the plurality of sharpness values are calculated with a sharpness function provided as a sum in a frequency space based on the plurality of images; and determining subsequent focusing strength values of the plurality of focusing strength values with a golden ratio search algorithm based one the calculated sharpness values.
Method for determining an abnormality and substrate processing system
A method for a substrate processing system includes imaging a substrate before start and after completion of a series of processings on the substrate; specifying a first processing apparatus estimated as having a potential abnormality among a plurality of processing apparatuses; performing a first process on a first inspection substrate under a selected processing condition using the first processing apparatus specified in the specifying, and imaging the first inspection substrate before and after the performing the first process to acquire a first imaging result; performing a second process on a second inspection substrate using a second processing apparatus, and imaging the second inspection substrate for comparison before and after the performing the second process to acquire a second imaging result; and determining whether an actual abnormality exists in the first processing apparatus, based on the first imaging result and the second imaging result.
Substrate inspection apparatus, substrate processing apparatus, substrate inspection method, and computer-readable recording medium
A substrate inspection apparatus includes: a storage configured to store inspection image data obtained from a captured image of a periphery of a substrate on which a plurality of films is formed, and an inspection recipe; and an edge detector configured to detect a target edge as an edge of an inspection target film among the films on the basis of the inspection image data stored in the storage by using the inspection recipe stored in the storage. Each of edges of the films extends along the periphery of the substrate. The inspection recipe is configured by combining parameters each of which has one option specified among a plurality of options.
Capacitive method of detecting wafer chucking and de-chucking
Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.
SYSTEM, METHOD, AND USER INTERFACE FOR EDGE RING WEAR COMPENSATION
A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.
INSPECTION DEVICE AND METHOD OF INSPECTING AND REPAIRING DISPLAY PANEL BY USING THE SAME
An inspection device, and a method of inspecting and a method of repairing a display panel using the inspection device are provided. The method of inspecting the display panel including light emitting elements includes acquiring an image of the display panel, and determining an alignment degree of the light emitting elements in the display panel.