A method for adjusting wafer deformation and a semiconductor structure are provided. The method includes the following operations. A deformation position and a deformation degree of a wafer are determined. At least one groove is formed at a back of the wafer according to the deformation position and the deformation degree. A stress film having a stress effect on the wafer deformation is formed at the back of the wafer with the at least one groove, and the stress film covers an inner wall of the at least one groove.

A die bonding method includes obtaining information about a quality grade of each die of a plurality of dies placed at a wafer, picking up a first die among the plurality of dies from the wafer, identifying a bonding location of a plurality of bonding locations from a substrate according to a quality grade of the first die, and bonding the first die to the bonding location of the substrate.

A transfer conveyor system for a semiconductor inspecting apparatus using a moving magnet includes a carrier in which a semiconductor wafer or a substrate is seated and accommodated and which is transferred, an armature which is provided to be accommodated in a permanent magnet plate under the carrier, a stator which is disposed to be spaced apart from the armature, is fixedly installed on a guide rail, a sensor unit which is installed at each of two ends of each motor coil, detects whether the armature approaches, senses a variation of the magnetic field, and measures a position of the armature from speed information of the armature, and a carrier monitoring unit which is provided on the carrier and monitors the carrier to detect an abrasion degree, a damage state, or an alignment/misalignment of the carrier in real time

Embodiments of systems and methods for measuring a surface topography of a semiconductor chip are disclosed. In an example, a method for measuring a surface topography of a semiconductor chip is disclosed. A plurality of interference signals and a plurality of spectrum signals are received by at least one processor. Each of the interference signals and spectrum signals corresponds to a respective one of a plurality of positions on a surface of the semiconductor chip. The spectrum signals are classified by the at least one processor into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip. A surface height offset between a surface baseline and at least one of the categories is determined by the at least one processor based, at least in part, on a calibration signal associated with the region corresponding to the at least one of the categories. The surface topography of the semiconductor chip is characterized by the at least one processor based, at least in part, on the surface height offset and the interference signals.

A method for inspecting a surface of a wafer, includes steps of: irradiating a surface of the wafer with a laser beam having three or more distinct wavelengths; detecting a reflected light from the surface of the wafer when the surface of the wafer is irradiated with the laser beam; and determining whether a foreign matter exists on the surface of the wafer based on reflectances of the surface of the wafer with respect to the laser beam having the three or more distinct wavelengths, wherein the step of determining whether the foreign matter exists includes a step of determining whether the foreign matter is a metal or a non-metal.

The invention provides a method for positioning a wafer and a semiconductor manufacturing apparatus, which are applied to thin film processes. The method includes: Step S1: Obtain the state distribution of the first surface of the first wafer after the thin film process is performed on the first wafer, wherein the first surface is the surface opposite to a surface that the thin film formed thereon in the thin film process; Step S2: Determine whether the first wafer is located at the ideal positioning center according to the state distribution of the first surface, when the first wafer is not located at the ideal positioning center, according to the state distribution of the first surface adjusts the positioning position of the second wafer to be subjected to the thin film process, so that the second wafer is positioned at the ideal positioning center during the thin film process. According to the present invention, the wafer is positioned at the ideal positioning center during the thin film process, thereby improving the quality of the thin film layer and the entire wafer (epitaxial wafer) after the thin film process, and improving the effect of the thin film process.

A gas-detecting apparatus includes a pump module connected to a first input and a second input to intake air, a sensor module including at least one unit sensor configured to output a sensing signal in response to gas present in the air, and a control module configured to detect the gas using the sensing signal. The control module controls the pump module to intake second air by opening the second input when gas is detected in first air introduced through the first input, and determines that gas is detected when a concentration of gas detected in the second air is lower than a concentration of gas detected in the first air.

Cryogenic testing systems for testing electronic components such as wafers under cryogenic conditions are provided. The novel designs enable fast throughput by use of a cryogenically maintained test surface to which wafers may be rapidly introduced, cooled, and manipulated to contact testing elements while maintaining high quality cryogenic conditions. Thermal shielding is achieved by floating shields and/or flexible bellows that provide effective thermal shielding of the test environment while enabling manipulation of wafers with a wide range of motion. Also provided are novel door assemblies, chuck configurations, and vacuum plate bases that enable effective maintenance of cryogenic conditions and high throughput.

The purpose of the present invention is to provide a substrate inspection device that increases the flatness of a substrate during inspection, and improves the detection sensitivity of foreign matter. Therefore, the present invention is a substrate inspection device provided with a turntable on which a substrate to be inspected is mounted, and a clamp mechanism that holds the substrate on the turntable. The substrate inspection device is characterized in that the clamp mechanism has an abutting part that moves in an in-plane direction of the substrate and presses the substrate. Preferably, the abutting part contacts or separates from an outer peripheral side surface of the substrate by rotating centered on a rotational axis in an out-of-plane direction of the substrate.

A treatment apparatus including a chuck table, a table base, a servo motor that rotates the table base, and a determination unit that determines the kind of the chuck table mounted to the table base is provided. The determination unit includes a torque recording section in which a torque outputted by the servo motor when rotating the table base is recorded on the basis of the kind of the chuck table, and a determination section that collates the torque outputted by the servo motor with the torque recording section, to thereby determine the kind of the chuck table.