The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

A substrate storage apparatus includes a stage on which a cassette that has a lid detachably mounted to an opening is disposed, a lid attaching/detaching plate that performs attaching/detaching of the lid to/from the opening of the cassette disposed on the stage, and is provided to be movable between a mounting position in contact with the lid disposed at a position of the opening and a retracted position not in contact with the lid disposed at the position of the opening, a lid holding sensor that detects whether the lid is being held by the lid attaching/detaching plate, and a controller that determines presence/absence of abnormality related to attachment/detachment of the lid based on a detection result of the lid holding sensor.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

A cutting apparatus includes a table including a support plate transparent in a visible region, a cutting unit, a first feeding mechanism that includes a first moving section for supporting the table and a first motor, a second feeding mechanism that includes a second moving section for supporting the cutting unit and a second motor, a first camera disposed on the side of a first surface of the support plate, a second camera disposed on the side of a second surface opposite to the first surface of the support plate, and a storage section that stores positional deviation amounts in the X-axis direction and the Y-axis direction between an imaging region at a reference position of the first camera and an imaging region at a reference position of the second camera.

Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

Disclosed are a device and a method for measuring a fretting displacement in a power cycling of a press-pack insulated gate bipolar transistor (IGBT). The IGBT includes: a bracket; slide bars slidably mounted on the bracket and are arranged at least four along a circumferential direction of the bracket; sensors respectively slidably installed on the bracket and the slide bars; and a power cycling experiment device arranged inside the bracket.

A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

The present application discloses a pressure drive system and method, and a semiconductor manufacture apparatus employing the system to perform pressure drive; by importing information of this wafer before a manufacture process initiates, a corresponding safe driving pressure and a corresponding safety threshold for each wafer are acquired and set for pressure control, and an abnormality judgment is performed based on data fed back by a pressure detection module in real time, thereby effectively avoiding a wafer breakage caused when an electrostatic release is abnormal, and the pressures for various wafers under different situations are controllable, and thus, an accuracy of the control is improved; with real-time feedback from the pressure detection module and a pressure regulation module, a wafer breakage, caused when an electrostatic release is abnormal, is effectively avoided.

Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.

The apparatus for inspecting the electrostatic chuck for substrate processing includes the electrostatic chuck including a ceramic layer and an electrode layer coupled to an inside of the ceramic layer, an ultrasonic sensor unit disposed on the electrostatic chuck, allowing an ultrasonic wave to be incident into the electrostatic chuck, and converting a reflected signal reflected through the electrostatic chuck into an ultrasonic voltage signal, and an ultrasonic inspection unit to divide the ceramic layer and the electrode layer, based on a size value of the ultrasonic voltage signal.