A supporting shelf module includes a plurality of plastic supporting plates parallelly arranged in a height direction, and at least one pair of metal-made connectors located at two opposite ends of the supporting plates in the height direction. The connectors in one pair are correspondingly located in two horizontal planes perpendicular to the height direction. A wafer container is also disclosed, which includes a container body having at least two sets of the supporting shelf modules mounted therein, at least two top retaining brackets and at least two bottom retaining grooves provided on an inward side of a top and a bottom panel of the container body, respectively. The supporting shelf module has upper ends engaged with the top retaining brackets and lower ends engaged with and limited to the bottom retaining grooves in an engaging direction. Thus, the tolerance problem of the conventional wafer shelf can be solved.

A substrate container with enhanced flow field therein includes a box, at least one offset inflation mechanism and at least one gas diffusion mechanism. The offset inflation mechanism is disposed outside internal receiving space of the box. The offset inflation mechanism has a gaseous chamber extending in the same direction as a bottom panel. The gas diffusion mechanism includes a base, a partition wall and at least one diffusion member. The base masks an outlet of the gaseous chamber to form an auxiliary gaseous chamber. The partition wall extends perpendicularly to the bottom panel to form a vertical first gas channel in communication with the auxiliary gaseous chamber. The diffusion member and the partition wall together define a second gas channel. The partition wall has at least one gap whereby the first gas channel and the second gas channel are in communication with each other.

Disclosed are a wafer support, a wafer processing device and a wafer processing method. The wafer support includes a cylinder, a sidewall of the cylinder including a first wall surface facing a wafer, a second wall surface facing away from the wafer and two third wall surfaces connected to the first wall surface and the second wall surface, the first wall surface being arranged opposite to the second wall surface, the two third wall surfaces being arranged opposite to each other, the two third wall surfaces being arranged at an angle, and a distance between the two third wall surfaces gradually decreasing in a direction close to the first wall surface; and one or more supporting blocks sequentially spaced apart on the first wall surface from top to bottom, the supporting block being configured to support the wafer.

A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snuggly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

There is provided an apparatus including a substrate holder to hold substrates including a product substrate and a dummy substrate, a transfer mechanism that loads the substrates into the substrate holder, a storage part to store a device parameter including at least the number of substrates that can be loaded on the substrate holder and the number of product substrates to be loaded on the substrate holder, and a controller to: (1) create substrate transfer data, which includes information indicating an order for transferring the substrates, transfer source information, and transfer destination information, according to the device parameter, (2) read the created substrate transfer data, (3) by transferring the substrates to the transfer mechanism based on the read substrate transfer data, transfer the dummy substrate to a substrate holding region except for a heat equalization region, and transfer the product substrate to the heat equalization region on the substrate holder.

In an embodiment, a system includes: a base; and a rod set comprising multiple rods connected to the base, wherein each rod of the rod set comprises multiple fingers disposed in a vertically-stacked relationship to each other and separated respectively from each other by respective slots, wherein each slot is configured to receive a bevel of a wafer, and wherein each of the multiple fingers comprises a rounded end at a furthest extension.

A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.

There is provided a substrate processing apparatus including a process chamber in which a substrate is accommodated, a processing gas supply system configured to introduce a processing gas containing hydrogen peroxide into the process chamber and an exhaust system configured to exhaust an interior of the process chamber, wherein at least one selected from the group of the process chamber, the processing gas supply system, and the exhaust system includes a metal member, the metal member exposed to the processing gas or a liquid generated by liquefying the processing gas is made of a material containing an iron element, and a surface of a plane of the metal members, which is exposed to the processing gas or the liquid, is formed of a layer containing iron oxide which is formed by performing a baking process on the metal member.

Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.