A detachable etching tool for etching a plurality of silicon carbide pieces has a first supporting column and a second supporting column, both of which are fixed through a tool fixing block. A bracket is arranged on the tool fixing block, and a limiting rod is installed on the lower end surface of the bracket. The bracket is inserted into the tool fixing block through the limiting rod and fixed on the tool fixing block with a fastening mechanism that comprises a base, a fixing seat, a telescopic spring, a telescopic guide column, a sliding block, a guide block, an inserting rod and a push-pull mechanism. The etching tool addresses low productivity per unit time and long time consumption in the etching processing.

The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.

A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

A method of manufacturing an actuator includes a first electrode layer forming step, a dielectric elastomer layer forming step, and a second electrode layer forming step, and obtains the actuator in which dielectric elastomer layers and electrode layers have been concentrically laminated. In the first electrode layer forming step, an electrode material is provided to an outer circumferential surface of a shaft section to form the electrode layer. In the dielectric elastomer layer forming step, a sheet-like or paste-like dielectric elastomer material is provided to an outer circumferential surface of the electrode layer to form the dielectric elastomer layer. In the second electrode layer forming step, the electrode material is provided to an outer circumferential surface of the dielectric elastomer layer to form the electrode layer.

A vertical wafer boat for a diffusion process is provided. The vertical wafer boat includes a plurality of wafer racks. Each of the plurality of wafer racks includes a vertical support member and a plurality of wafer support arms. The plurality of wafer support arms extends from a sidewall of the vertical support member. Each of the wafer support arms includes a support body and a ledge. The support body is located between the vertical support member and the ledge. Centers of the support body and the ledge are horizontally aligned. A vertical thickness of the ledge is smaller than a vertical thickness of the support body.

A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid.

There is provided a technique that includes: a substrate holder; a reaction tube accommodating the substrate holder; a furnace body surrounding the reaction tube; a gas supplier including inlets corresponding to substrates held in the reaction tube and supplying gases from the inlets in parallel to surfaces of the substrates; and a gas exhauster including an outlet facing lateral sides of the substrates and exhausting the gases flowing on the surfaces of the substrates, wherein the substrate holder includes: annular members each arranged concentrically with the rotation axis at a predetermined pitch on planes orthogonal to the rotation axis; columns each arranged along a circumscribed circle substantially coinciding with outer circumferences of the annular members, and holding the plurality of annular members; and supports supporting the substrates at positions between two adjacent annular members.

There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

A substrate container including a casing, a rack, a casing holder, a casing lifting mechanism, a lid, and a lid holder. When holding of substrates with the rack shifts to holding of the substrates with the casing holder and the lid holder, the casing lifting mechanism moves the casing holder upward, whereby the casing holder moves the substrates upward. When the holding of the substrates with the casing holder and the lid holder shifts to the holding of the substrates with the rack, the casing lifting mechanism moves the casing holder downward, whereby the casing holder moves the substrates downward.