A wafer cassette includes a front plate and a rear plate disposed opposite to face each other; and at least two top elongated rods, at least two middle elongated rods and at least two bottom elongated rods, each having a plurality of grooves shaped thereinto. The top elongated rods, the middle elongated rods and the bottom elongated rods each has two ends being pivotally connected to the front plate and the rear plate, respectively. The top elongated rods, the middle elongated rods and the bottom elongated rods each comprises a solid-iron rod enclosed with a cladding layer.

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.

Methods for processing semiconductor wafers, methods for loading semiconductor wafers into wafer carriers, and semiconductor wafer carriers. The methods and wafer carriers can be used for increasing the rigidity of wafers, e.g., large and thin wafers, by intentionally bowing the wafers to an extent that does not break the wafers. In some examples, a method for processing semiconductor wafers includes loading each semiconductor wafer into a respective semiconductor wafer slot of a semiconductor wafer carrier, horizontally bowing each semiconductor wafer, and moving the semiconductor wafer carrier into a processing station and processing the semiconductor wafers at the processing station while the semiconductor wafers are loaded into the semiconductor wafer carrier and horizontally bowed.

A microLED mass transfer stamping system includes a stamp substrate with an array of trap sites, each configured with a columnar-shaped recess to temporarily secure a keel extended from a bottom surface of a microLED. In the case of surface mount microLEDs, the keel is electrically nonconductive. In the case of vertical microLEDs, the keel is an electrically conductive second electrode. The stamping system also includes a fluidic assembly carrier substrate with an array of wells having a pitch separating adjacent wells that matches the pitch separating the stamp substrate trap sites. A display substrate includes an array of microLED pads with the same pitch as the trap sites. The stamp substrate top surface is pressed against the display substrate, with each trap site interfacing a corresponding microLED site, and the microLEDs are transferred. Fluidic assembly stamp substrates are also presented for use with microLEDs having keels or axial leads.

Semiconductor wafer carriers, methods for manufacturing the semiconductor wafer carriers, and methods for using the semiconductor wafer carriers. The semiconductor wafer carriers can include features for avoiding double-slotting, for preventing glove marks on semiconductor wafers, and for providing additional sitting and storage options for the wafer carrier. In some examples, a semiconductor wafer carrier includes multiple notched left-side rods that are parallel in a vertical direction and multiple notched right-side rods that are parallel in the vertical direction. The semiconductor wafer carrier includes one or more bottom rods. The left-side rods, the right-side rods, and the one or more bottom rods are joined to define semiconductor wafer slots.

Methods for processing semiconductor wafers, methods for loading semiconductor wafers into wafer carriers, and semiconductor wafer carriers. The methods and wafer carriers can be used for increasing the rigidity of wafers, e.g., large and thin wafers, by intentionally bowing the wafers to an extent that does not break the wafers. In some examples, a method for processing semiconductor wafers includes loading each semiconductor wafer into a respective semiconductor wafer slot of a semiconductor wafer carrier, horizontally bowing each semiconductor wafer, and moving the semiconductor wafer carrier into a processing station and processing the semiconductor wafers at the processing station while the semiconductor wafers are loaded into the semiconductor wafer carrier and horizontally bowed.

Semiconductor wafer carriers, methods for manufacturing the semiconductor wafer carriers, and methods for using the semiconductor wafer carriers. The semiconductor wafer carriers can include features for avoiding double-slotting, for preventing glove marks on semiconductor wafers, and for providing additional sitting and storage options for the wafer carrier. In some examples, a semiconductor wafer carrier includes multiple notched left-side rods that are parallel in a vertical direction and multiple notched right-side rods that are parallel in the vertical direction. The semiconductor wafer carrier includes one or more bottom rods. The left-side rods, the right-side rods, and the one or more bottom rods are joined to define semiconductor wafer slots.

A method, device, and apparatus is provided for detecting moisture and/or electrically conductive remains on a wafer after the wafer is removed from a drying chamber of a processing tool that includes wet clean processing. Embodiments include fixing a wafer to an endeffector between a processing chamber and a FOUP, moving the wafer from the processing chamber toward the FOUP, detecting moisture and/or electrically conductive remains on the wafer, and delivering the wafer to the FOUP, if no moisture and/or electrically conductive remains are detected, or delivering the wafer to a buffer station, if moisture and/or electrically conductive remains are detected.

Wafer boats for the plasma treatment of disc-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, and a plasma treatment apparatus for wafers are described. A wafer boat comprises a plurality of first carrier elements which are positioned parallel to one another, wherein each first carrier element has a plurality of carrier slits for receiving the edge of a wafer or wafer pair, and a plurality of second carrier elements which are positioned parallel to one another, which are each electrically conductive and have at least one recess for holding the edge region of at least one wafer or one wafer pair. An alternative wafer boat comprises a plurality of electrically conductive plate shaped carrier elements, which are positioned parallel to one another and which are less than half as high as the wafers to be received, wherein the carrier elements each have on their opposing sides at least three carrier elements for receiving wafers. The wafer boats can be held in the process chamber of the plasma treatment apparatus, and the plasma treatment apparatus comprises means for controlling or regulating a process gas atmosphere in the process chamber. The plasma treatment apparatus also comprises at least one voltage source which is connectable with the electrically conductive carrier elements of the wafer boat in a suitable manner to apply an electrical voltage between directly adjacent wafers held in the wafer boat.

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.