The present disclosure discloses a semiconductor processing apparatus, which is configured to perform processing on a wafer. The disclosed semiconductor processing apparatus includes a vacuum interlock chamber, a plurality of apparatus bodies, the apparatus body including a transfer platform, and at least two reaction chambers being arranged along a circumferential direction of the transfer platform, and a temporary storage channel, any two neighboring apparatus bodies being communicated through the temporary storage channel, and the temporary storage channel being configured to temporarily store the wafer. One of the plurality apparatus bodies is connected to the vacuum interlock chamber. The transfer platform is configured to transfer the wafer between the vacuum interlock chamber and the reaction chamber, between the temporary storage channel and the vacuum interlock chamber, and between the temporary storage channel and the reaction chamber. With the above solution, the problem that the productivity of the semiconductor processing apparatus is low is solved.

The present disclosure provides a substrate treating apparatus having improved efficiency and productivity. The substrate treating apparatus of the present disclosure comprises a process chamber having a treating space therein, a transfer robot comprising a robot hand for loading and unloading a substrate into and out of the treating space and gripping the substrate, and a teaching buffer for aligning the robot hand, wherein the teaching buffer comprises a teaching plate for providing a reference point, and at least one camera looking at the teaching plate, wherein the camera captures the reference point of the teaching plate, wherein the transfer robot aligns the robot hand with the reference point using the camera.

A method and apparatus for reducing cool-down times within a cool-down chamber are described herein. The method and apparatus include a process chamber, a transfer chamber, a dual-handled transfer robot within the transfer chamber, and a cool-down chamber. The dual-handled transfer robot it utilized to transfer a substrate between the process chamber and the cool-down chamber. The amount of time the substrate is disposed on the dual-handled transfer robot before being moved into the cool-down chamber is multiplied by a correction factor and subtracted from an original cool down time to achieve an adjusted cool down time. The adjusted cool down time is determined separately for each substrate being cooled within the cool-down chamber.

A teaching apparatus includes a chamber; an electrostatic chuck in the chamber, the electrostatic chuck including a sidewall surrounding a loading area; an aligner configured to be loaded onto the loading area of the electrostatic chuck; a vision sensor configured to obtain measurement data by measuring separation distances of separation regions between the aligner and the sidewall of the electrostatic chuck and to transmit the measurement data; a transfer robot configured to load the aligner onto a reference position of the loading area and to position the vision sensor above the electrostatic chuck; and controller configured to reset the reference position and to equalize the separation distances based on the measurement data transmitted from the vision sensor.

A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

A process tool and a method are provided for handling a semiconductor substrate as part of a semiconductor fabrication process. The process tool includes a cooling station and a transport system, such as a front-end robot, for positioning the semiconductor substrate in the cooling station during a cooling operation.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber configured to treat a substrate; a transfer assembly configured to transfer the substrate to the process chamber; and a diagnosis unit configured to detect an abnormal state of the transfer assembly, and wherein the transfer assembly comprises: a housing having a transfer space; and a transfer robot configured to transfer the substrate to the process chamber, and wherein the diagnosis unit comprises: a detection member for detecting an air vibration generated within the housing; and a diagnosis member for diagnosing a driving unit of the transfer assembly based on the air vibration detected by the detection member.

The present disclosure relates to a substrate transfer device for sensing deflection of an end-effector and a substrate processing apparatus having the same. The substrate transfer device includes: an end-effector extending in a first direction and supporting a substrate; an end-effector hand connected with one side in the first direction of the end-effector; a horizontal movement unit connected with the end-effector hand and moving the end-effector in the first direction; and a deflection sensing unit including a light emitting part and a light receiving part, which are respectively disposed at both sides of a movement path of the end-effector, and sensing deflection of the end-effector.

A substrate transport apparatus auto-teach system for auto-teaching a substrate station location, the system including a frame, a substrate transport connected to the frame, the substrate transport having an end effector configured to support a substrate, and a controller configured to move the substrate transport so that the substrate transport biases the substrate supported on the end effector against a substrate station feature causing a change in eccentricity between the substrate and the end effector, determine the change in eccentricity, and determine the substrate station location based on at least the change in eccentricity between the substrate and the end effector.

A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.