The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a drying fluid to the inner space; and a fluid exhaust unit configured to exhaust the drying fluid from the inner space, and wherein the fluid exhaust unit includes an exhaust line connected to the chamber; a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space at a set pressure; and a heating member installed at the pressure adjusting member or a back end of the pressure adjusting member.

The present invention provides a substrate treating apparatus including: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a treatment liquid to the substrate supported on the support unit; and a heating unit for heating any one of the first pattern and the second pattern.

Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

An atmosphere-to-vacuum (ATV) transfer module for a substrate processing tool includes a first side configured to interface with at least one loading station, a transfer robot assembly arranged within the ATV transfer module, and a second side opposite the first side. The transfer robot assembly is configured to transfer substrates between the at least one loading station and at least one load lock arranged between the ATV transfer module and a vacuum transfer module (VTM). The second side is configured to interface with the at least one load lock. The transfer robot assembly is arranged adjacent to the second side, and the at least one load lock extends through the second side into an interior volume of the ATV transfer module.

A travel robot for moving a substrate transfer robot in a vacuum chamber, includes: an elevating part located in a lower outer region of a housing, sealing the vacuum chamber, wherein an elevating drive shaft moves through a vacuum chamber through-hole; a travel arm platform through which coupling holes are formed, wherein the elevating drive shaft is inserted into a lower space of one of the coupling holes; a first travel arm part including a (1_1)-st and a (1_2)-nd travel link arms; a second travel arm part including a (2_1)-st and a (2_2)-nd travel link arms, wherein travel driving motors and speed reducers are installed in the (1_1)-st and the (2_1)-st travel link arms; and a transfer robot coupling part engaged with the (1_2)-nd and the (2_2)-nd travel link arms, wherein a rotation driving motor built thereon is engaged with the substrate transfer robot by a rotation drive shaft.

A substrate transfer robot for transferring a substrate in a vacuum chamber, includes: a transfer arm platform having coupling holes, each compartmentalized into a lower and an upper space, wherein a link connecting member with blades is engaged at a front area of the transfer arm platform and a support shaft of a lower support is inserted into the lower space of one of the coupling holes; and a first and a second transfer arm part each including an end effector for supporting the substrate, multiple transfer link arms and subordinate link arms, and a common link arm that are connected to each other or to the transfer arm platform, wherein, for each transfer arm part, drive shafts, interlocked with transfer driving motors or speed reducers installed on one of the transfer link arms, and output shafts interlocked with the drive shafts are installed on the transfer link arms.

A method of processing a wafer includes preparing a ring-shaped frame having an opening for accommodating a wafer therein, preparing a wafer having a protrusive ring-shaped stiffener on a reverse side thereof in an outer circumferential excess region thereof, producing a frame unit by affixing a tape to the frame and the reverse side of the wafer, capturing an image of the ring-shaped stiffener and setting a center of an inner circumferential circle of the ring-shaped stiffener on the basis of the captured image, rotating the frame unit around the center of the inner circumferential circle of the ring-shaped stiffener to cut the wafer along the inner circumferential circle of the ring-shaped stiffener, and removing the ring-shaped stiffener severed from the frame unit.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating container having a treating space; a support unit configured to support and rotate a substrate in the treating space; an exhaust line coupled to the treating container and configured to exhaust an airflow within the treating space; a support frame provided independently of a rotation of the support unit and positioned between the treating container and the support unit; and a guide vane protruding to an outside of the support frame and configured to guide the airflow within the treating space in a downward direction.

A circulating EFEM includes an introduction port for introducing a gas, a housing for circulating the introduced gas, and a discharge port for discharging the gas from the housing into a discharge pipe. The discharge port includes a box and a damper. The box is disposed to surround a discharge opening formed on the housing and connected to the discharge pipe. The damper is disposed inside the box to close and open the discharge port and adjusts a discharge amount of the gas via the discharge opening by at least partially moving in response to a differential pressure between the housing and the box.

There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.