H01L21/67745

SEQUENCER TIME LEAPING EXECUTION
20210405626 · 2021-12-30 ·

A method includes receiving a plurality of operations in a sequence recipe. The plurality of operations are associated with processing a plurality of substrates in a substrate processing system. The method further includes identifying a plurality of completion times corresponding to the plurality of operations. Each completion time of the plurality of completion times corresponds to completion of a respective operation of the plurality of operations. The method further includes simulating the plurality of operations by setting a virtual time axis to each of the plurality of completion times to generate a schedule for the sequence recipe. The method further includes causing, based on the schedule, the plurality of substrates to be processed or performance of a corrective action.

Multi-object capable loadlock system

A method includes receiving, by a first loadlock chamber of the loadlock system, a first object from a factory interface via a first opening. The first object is transferred into the first loadlock chamber via a first robot arm. The factory interface is at a first state. The first loadlock chamber is configured to receive different types of objects. The method further includes sealing a first loadlock door against the first opening to create a first sealed environment at the first state in the first loadlock chamber and causing the first sealed environment of the first loadlock chamber to be changed to a second state. The method further includes actuating a second loadlock door to provide a second opening between the first loadlock chamber and a transfer chamber. The first object is to be transferred from the first loadlock chamber to the transfer chamber via a second robot arm.

Coating and developing apparatus and coating and developing method

An apparatus includes: a treatment block including treatment modules; and a relay block coupling the treatment block and an exposure apparatus in a width direction, and including a transfer-in/out mechanism for the exposure apparatus. In the treatment block being multilayered in an up-down direction, a transfer mechanism is provided in a transfer region extending in the width direction. In a layer, in the treatment block, at a position accessible from the transfer-in/out mechanism, a deliverer on which the substrate is mounted when the substrate is delivered between the blocks is provided at an end on the relay block side. Pre-exposure storages storing the substrate before the exposure are provided along the width direction in two regions between which the transfer region is interposed in a depth direction. A non-treatment unit is provided at a portion where the pre-exposure storages are not provided in the two regions.

AUTOMATIC WAFER CENTERING METHOD AND APPARATUS
20210375657 · 2021-12-02 ·

A substrate transport apparatus including a transport chamber, a drive section, a robot arm having an end effector at a distal end configured to support a substrate and being connected to the drive section generating at least arm motion in a radial direction extending and retracting the arm, an imaging system with a camera mounted in a predetermined location to image at least part of the robot arm, and a controller connected to the imaging system to image the arm moving to a predetermined repeatable position, the controller effecting capture of a first image of the robot arm proximate to the repeatable position decoupled from encoder data of the drive axis, wherein the controller calculates a positional variance of the robot arm from comparison of the first image with a calibration image, and from the positional variance determines a motion compensation factor changing the extended position of the robot arm.

SUBSTRATE PROCESSING APPARATUS AND METHOD OF OPENING/CLOSING LID OF SUBSTRATE ACCOMMODATING VESSEL
20210375655 · 2021-12-02 ·

A substrate processing apparatus includes: a substrate processing part including a load port configured to place thereon a substrate accommodating vessel in which at least one substrate is accommodated, and configured to take out the at least one substrate from the substrate accommodating vessel and to perform a series of processes on the at least one substrate; and a controller configured to control an opening and closing of a lid of the substrate accommodating vessel, wherein the controller performs control to open the lid after the substrate accommodating vessel is placed on the load port, and the controller performs control to close the lid when an abnormality occurs in the substrate processing part and when none of the at least one substrate removed from the substrate accommodating vessel can be recovered to the substrate accommodating vessel after a predetermined period of time from the occurrence of the abnormality.

APPARATUS AND METHODS FOR AUTOMATICALLY HANDLING DIE CARRIERS

Apparatus and methods for automatically handling die carriers are disclosed. In one example, a disclosed apparatus includes: at least one load port each configured for loading a die carrier operable to hold a plurality of dies; and an interface tool coupled to the at least one load port and a semiconductor processing unit. The interface tool comprises: a first robotic arm configured for transporting the die carrier from the at least one load port to the interface tool, and a second robotic arm configured for transporting the die carrier from the interface tool to the semiconductor processing unit for processing at least one die in the die carrier.

FORELINE ASSEMBLY FOR QUAD STATION PROCESS MODULE
20220208575 · 2022-06-30 ·

A foreline assembly for a quad station process module (QSM) is provided. In some examples, a foreline assembly comprises four inlets each connectable to a chamber port of a process module of the QSM and an outlet connectable directly or indirectly to a vacuum source. A first foreline bifurcation is disposed proximate the outlet of the foreline assembly. Two second bifurcations are each disposed between the first foreline bifurcation and a respective pair of the inlets. The first and second bifurcations divide the foreline assembly into three sections. A respective diameter of a foreline in each section increases stepwise at a respective bifurcation in a direction of gas flow from at least one of the inlets to the outlet of the foreline assembly and is constant within a respective section of the foreline assembly.

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
20220208565 · 2022-06-30 · ·

A substrate processing apparatus includes a substrate cleaning unit cleaning a substrate, a substrate drying unit drying the substrate, and a transfer robot transferring the substrate between the substrate cleaning unit and the substrate drying unit. The substrate drying unit includes a substrate processing container having a substrate processing space accommodating the substrate, and the transfer robot includes a surface temperature measurement sensor measuring a surface temperature of the substrate processing container.

VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION DEVICE
20220199397 · 2022-06-23 · ·

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.

VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION DEVICE
20220199398 · 2022-06-23 · ·

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier and susceptor are cleaned at a predetermined frequency. After that, the carrier is carried out from the reaction chamber, and the reaction gas is supplied to the reaction chamber to form a polysilicon film on the surface of the susceptor.