A substrate treatment method for treating a substrate, includes the steps of: (A) heating the substrate having a coating film formed on a surface thereof by supply of a coating solution; (B), after the (A) step, moving a discharge destination of a removing solution from a peripheral position on the surface of the substrate toward a center side of the substrate and turning it back at a first position to return it again to the peripheral position while rotating the substrate; (C), after the (B) step, moving the discharge destination of the removing solution from the peripheral position on the surface of the substrate toward center side of the substrate and turning it back at a second position closer to an outside than the first position to return it again to the peripheral position while rotating the substrate; and (D), after the (C) step, heating again the substrate.

A transfer apparatus including a frame, multiple arms connected to the frame, each arm having an end effector and an independent drive axis for extension and retraction of the respective arm with respect to other ones of the multiple arms, a linear rail defining a degree of freedom for the independent drive axis for extension and retraction of at least one arm, and a common drive axis shared by each arm and configured to pivot the multiple arms about a common pivot axis, wherein at least one of the multiple arms having another drive axis defining an independent degree of freedom with respect to other ones of the multiple arms.

A method includes transferring a wafer to a position over a wafer chuck; ejecting a first gas from a purging device above the wafer to clean a top surface of the wafer; after ejecting the first gas, lifting a lifting pin through the wafer chuck to receive the wafer; and after the wafer is received by the lifting pin, ejecting a second gas from first openings in a sidewall of the lifting pin to a region between a bottom surface of the wafer and a top surface of the wafer chuck.

A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

An apparatus for transferring a substrate is disclosed herein. More specifically, the apparatus relates to substrate handling systems used in semiconductor device manufacturing, and more particularly, to substrate handling systems having a substrate handler with enclosed moving elements and increased compatibility with post-CMP cleaning modules. The apparatus includes one or more indexing assemblies. Each of the indexing assemblies including an enclosure, an actuator assembly disposed within the enclosure, and two handling blades disposed outside of the disclosure. Each of the two blades are moveable in either of a translational or a rotating manner.

Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

In some embodiments, the present disclosure relates a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a workpiece holder apparatus that is configured to hold a workpiece. A sonar sensor is arranged over the workpiece holder apparatus. The sonar sensor includes an emitter that is configured to produce sound waves traveling towards the workpiece holder apparatus. The sonar sensor also includes a detector that is configured to receive reflected sound waves from the workpiece holder apparatus or an object between the sonar sensor and the workpiece holder apparatus. Further, sonar sensor control circuitry is coupled to the sonar sensor and is configured to determine if a workpiece is present on the workpiece holder apparatus based on a sonar intensity value of the reflected sound waves received by the detector of the sonar sensor.

A method includes: receiving a substrate on a first stage by a holder of a substrate transfer mechanism; causing the substrate to pass through a first measurement part, and measuring a first true deviation amount between the holder and the substrate at a first position; causing, when transferring the substrate toward a second stage, the substrate to pass through a second measurement part, and measuring a second true deviation amount between the holder and the substrate at a second position; reflecting a difference between the first and second true deviation amounts to a physical model to correct the physical model; calculating a position correction amount of the holder on the second stage from a thermal displacement amount of the holder at the second position; and controlling the substrate transfer mechanism based on the position correction amount to perform a position correction of the holder.

An apparatus for treating a substrate includes a heat treatment chamber having an interior space, a housing that is provided in the interior space and that has a treatment space therein, a gas supply line that supplies, into the treatment space, a hydrophobic gas for hydrophobicizing the substrate, and a decomposition unit that decomposes an alkaline gas leaking from the treatment space to the interior space.