The current disclosure relates to a vapor deposition assembly for depositing material on a substrate. The vapor deposition assembly comprises a treatment chamber for treating susceptors from a deposition chamber that comprises multiple, moveable susceptors. The assembly further comprises a transfer system configured and arranged to move a susceptor between the deposition chamber and the treatment chamber. The disclosure further relates to a method of cleaning as susceptor and to a susceptor treatment apparatus.

A substrate processing apparatus includes a liquid processing module, including a carry-out/in port of a substrate, in which a first liquid processing device and a second liquid processing device provided at a position farther from the carry-out/in port than the first liquid processing device is are provided; and a transfer device configured to carry the substrate out from and into the liquid processing module. The first liquid processing device performs a first liquid processing on the substrate. The second liquid processing device performs a second liquid processing on the substrate before or after the first liquid processing. The transfer device includes a substrate holder configured to be moved back and forth in a first horizontal direction, and carries the non-processed substrate into the first liquid processing device through the carry-out/in port and carries the processed substrate out from the first liquid processing device through the carry-out/in port.

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space.

A cutting apparatus includes a cassette table on which a first cassette in which a frame unit, ring-shaped frame and wafer are housed, and a second cassette in which a simple wafer is housed. A first conveying unit having a first frame holding part holds the ring-shaped frame of the frame unit withdrawn from the first cassette and conveys the frame unit to a chuck table. A first wafer holding part holds the simple wafer withdrawn from the second cassette and conveys the simple wafer to the chuck table. A cutting unit cuts the wafer, and a second conveying unit conveys the frame unit from the chuck table to a cleaning unit. A second wafer holding part holds the cut simple wafer and conveys it from the chuck table to the cleaning unit.

A substrate treating apparatus includes a carrier platform, a transport mechanism, and a controller. The carrier platform places a carrier thereon. The carrier includes a plurality of shelves arranged in an up-down direction. The shelves are each configured to place one substrate thereon in a horizontal posture. The transport mechanism is configured to transport a substrate to a carrier placed on the carrier platform. The controller controls the transport mechanism. The transport mechanism includes a hand and a hand driving unit. The hand supports a substrate. The hand driving unit moves the hand. The controller changes a height position of the hand when the hand is inserted between two of the shelves adjacent to each other in the up-down direction, depending on a shape of a substrate taken from or placed on one of the shelves by the transport mechanism.

A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.

A substrate aligner providing minimal substrate transporter extend and retract motions to quickly align substrate without back side damage while increasing the throughput of substrate processing. In one embodiment, the aligner having an inverted chuck connected to a frame with a substrate transfer system capable of transferring substrate from chuck to transporter without rotationally repositioning substrate. The inverted chuck eliminates aligner obstruction of substrate fiducials and along with the transfer system, allows transporter to remain within the frame during alignment. In another embodiment, the aligner has a rotatable sensor head connected to a frame and a substrate support with transparent rest pads for supporting the substrate during alignment so transporter can remain within the frame during alignment. Substrate alignment is performed independent of fiducial placement on support pads. In other embodiments the substrate support employs a buffer system for buffering substrate inside the apparatus allowing for fast swapping of substrates.

The present disclosure relates to a wafer processing apparatus and a wafer transfer method. The wafer processing apparatus includes: a first machine; a second machine, including a manipulator, the manipulator transfers a wafer to the machine through a connection port; the connection port is provided between the first machine and the second machine; door panels, provided on the first machine and used to close the connection port; a detector, for detecting a current position of the door panel; a driver, connected to the door panel, for driving the door panel to move to open or close the connection port; and a controller, connected to the detector, the driver and the manipulator, for controlling the door panel to move according to the current position of the door panel to open or close the connection port, and control the manipulator to transfer the wafer.

A substrate processing apparatus includes: a loading/unloading block; a processing station provided on one of left and right sides of the loading/unloading block; a relay block provided on one of left and right sides of the processing station; processing blocks provided side by side in a left-right direction to form the processing station, each of the processing blocks including a processing module configured to perform a process on the substrate and a main transfer mechanism configured to deliver the substrate to the processing module; and bypass transfer mechanisms provided separately from the main transfer mechanism and provided respectively for the processing blocks arranged side by side in the left-right direction to transfer the substrate between left and right blocks, wherein bypass transfer paths for the substrate transferred by the plurality of bypass transfer mechanisms have heights different from each other, and partially overlap each other in a plan view.