There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

Disclosed herein are systems and methods relating to a transfer chamber for an electronic device processing system. The transfer chamber includes a magnetic levitation platform, having a magnetic levitation track disposed along a length of the transfer chamber and configured to generate a magnetic field above the track. The transfer chamber also includes a magnetic levitation track disposed along a width of the transfer chamber such that a plane of this lateral track crosses a plane of the longitudinal track at a junction. The lateral track is configured to generate a magnetic field above or below the track. The platform further includes at least one substrate carrier configured to move along the longitudinal track and the lateral track. The substrate carrier also is configured to rotate at the junction.

Air curtain devices can reduce defects on semiconductor wafers when implemented on a track equipped with robotic wafer transport. The air curtain devices can be added to one or more processing devices arranged along the track to prevent defects from landing on wafer surfaces. For example, the air curtain devices can prevent volatile organic solvent mist from drifting towards processing devices on the track and preventing contamination via a wafer transport system.

A cleaning assembly may include a chuck. The cleaning assembly may include a plurality of lift pins positioned proximate to the chuck. The plurality of lift pins may be configured to engage a cleaning substrate and translate the cleaning substrate to allow the cleaning substrate to capture one or more particles from the surface of the chuck via at least one of electrostatic attraction or mechanical trapping when the cleaning substrate is positioned in the second position. The cleaning assembly may include a replaceable top skin coupled to the chuck and configured to capture the one or more particles.

The plating machine 1 comprises a plurality of treatment units 14 and a conveying means 13 that conveys a wafer W to the plurality of treatment units 14, wherein the conveying means 13 includes an arm 31 that is provided, on one end side, with a plating tool 32 that holds the wafer W, and an arm rotation drive unit 33 that rotates the arm 31 around another end side of the arm 31, and the plurality of treatment units 14 is arranged at predetermined intervals on a rotation trajectory of the plating tool 32.

A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.

A substrate processing apparatus includes: a process chamber performing film-forming processing to a substrate; a substrate support that is provided in the process chamber and includes a plurality of mounting surfaces on which the substrate is mounted; and a detector that is disposed outside or inside the process chamber and detects a state of a film-forming material adhering to at least one of the plurality of mounting surfaces in a non-contact manner.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.