The present disclosure provides a substrate processing apparatus including at least one input/output chamber. The load lock device includes a base, a guide rail, a platform and an optical measuring module. The guide rail is connected to the base. The platform, carrying a cassette for holding a batch of spaced substrates, is movably disposed on the guide rail. The optical measuring module is configured to acquire an actual moving distance traveled by the platform along the guide rail based on at least one optical signal reflected from the platform.

A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

A method for cleaning semiconductor wafer includes putting at least one wafer on a cassette bracket in a first cleaning tank filled with chemical solution; after said wafers have been processed in the first cleaning tank, transferring the wafers from the first cleaning tank to a second cleaning tank with the wafers immersing in the chemical solution; and after said wafers have been processed in the second cleaning tank, taking the wafers out of the second cleaning tank.

A substrate processing tool includes a wafer transport assembly that includes a first wafer transport module and extends along a longitudinal axis of the substrate processing tool. A plurality of process modules includes a first process module and a second process module arranged on opposite sides of the longitudinal axis of the substrate processing tool. Outer sides of the first wafer transport module are coupled to the first and second process modules, respectively. A service tunnel defined below the wafer transport assembly extends along the longitudinal axis from a front end of the substrate processing tool to a rear end of the substrate processing tool below the wafer transport assembly.

A film-forming device that includes a cylindrical chamber capable of maintaining vacuum therein, a workpiece holder that is constructed to align and hold workpieces to be processed in multiple stages such that main surfaces of the workpieces are oriented in a vertical direction relative to a central axis of the chamber, a deposition material supply pipe, a modifier supply pipe, a carrier gas supply pipe, and an exhaust mechanism, wherein in a cross section of the chamber in a direction parallel to the main surfaces of the workpieces, the exhaust mechanism is located on a side opposite to an opening direction of gas outlets of the deposition, modifier, and carrier gas supply pipes, and a total gas flow from the deposition, modifier, and carrier gas supply pipes is symmetric about a centerline of the chamber.

An embodiment is a processing system for processing a substrate. The processing system includes a Front Opening Unified Pod (FOUP) load lock (FLL) and a vacuum system. The FLL has walls defining an interior space therein. The FLL includes load lock isolation and tunnel isolation doors. The load lock isolation door is operable to close a first opening in a first sidewall of the FLL. The first opening is sized so that a FOUP is capable of passing therethrough. The tunnel isolation door is operable to close a second opening in a second sidewall of the FLL. The second opening is sized so that a substrate is capable of passing therethrough. The vacuum system is fluidly connected to the interior space of the FLL and is operable to pump down a pressure of the interior space of the FLL.

In a substrate transfer mechanism, a moving body moves horizontally, and a support body is provided at the moving body to rotate about a vertical shaft. A first rotary shaft and a second rotary shaft are disposed vertically. A first arm forms a first substrate support region for supporting a first substrate, the first arm having a base portion connected to the first rotary shaft and a tip portion rotating at an outer side of the support body. A second arm forms a second substrate support region for supporting a second substrate, the second arm having a base portion connected to the second rotary shaft and a tip portion rotating the outer side of the support body. Further, an elevating mechanism is configured to raise and lower the second rotary shaft depending on a direction of the second arm with respect to the support body.

Described herein is a technique capable of suppressing generation of particles and improving a throughput. According to one aspect of the technique, there is provided a substrate processing apparatus including: a loading chamber accommodating a boat; an elevator configured to elevate and lower the boat; a boat exchanging device configured move the boat on the elevator to a first stand-by region and a second stand-by region; a first clean air supplier facing an unloading region in the loading chamber where the boat placed on the elevator is accommodated; a second clean air supplier facing the first stand-by region; and a third clean air supplier facing the second stand-by region, wherein a flow volume ejected from the clean air suppliers are individually controlled so as to form a predetermined air flow in a range of height in which the boat exchanging device in the loading chamber is provided.

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

A process module includes four stages arranged in a two-row and two-column layout inside the process module, wherein a row interval and a column interval that constitute the two-row and two-column layout have different dimensions.