Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Embodiments of apparatus and method for testing metal contamination are disclosed. In an example, an apparatus for testing metal contamination includes a chamber in which a test object is placed, a gas supply configured to supply nitrogen gas into the chamber, a pressure controller configured to apply a pressure of at least about 1 torr in the chamber, and a measurement unit configured to measure a concentration of a metal from the test object.

A substrate processing apparatus includes a substrate processor and a substrate transporter. The substrate processor includes an upper holding device and a lower holding device configured to be capable of holding a substrate. In the substrate processor, the lower holding device is provided below the upper holding device. Therefore, a height position at which a substrate can be held by the upper holding device is different from a height position at which the substrate can be held by the lower holding device. The substrate transporter has first and second hands that hold a substrate. The second hand is located farther downwardly than the first hand. A substrate is received from or transferred to the upper holding device by the first hand. A substrate is received from or transferred to the lower holding device by the second hand.

A film forming apparatus is provided. The apparatus comprises a processing chamber accommodating a plurality of substrates; a plurality of substrate supporting units disposed in the processing chamber and configured to place the substrates thereon; a substrate moving mechanism configured to linearly move the substrate supporting units in a first direction; sputter particle emitting units, each having a target for emitting sputter particles into the processing chamber; and a controller configured to control the sputter particle emitting units and the substrate moving mechanism. The controller controls the substrate moving mechanism to linearly move the substrate supporting units on which the substrates are placed in the first direction and controls the sputter particle emitting units to emit sputter particles to be deposited on the substrates.

A transport carrier docking device may be capable of forming an air-tight seal around a transport carrier while a front portion of the transport carrier is inserted into a chamber of the transport carrier docking device. Semiconductor wafers in the transport carrier may be accessed by a transport tool while the air-tight seal exists around the transport carrier, which prevents and/or reduces the likelihood that contaminants in a semiconductor fabrication facility will reach the semiconductor wafers. The air-tight seal around the transport carrier may reduce defects of the semiconductor wafers that might otherwise be caused by the contaminants, may increase manufacturing yield and quality in the semiconductor fabrication facility, and/or may permit the continued reduction in device and/or feature sizes of integrated circuits and/or semiconductor devices that are to be formed on semiconductor wafers.

Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.

A transfer apparatus transfers a first substrate and a second substrate while holding the first substrate and the second substrate to overlap each other in a plan view. The transfer apparatus includes: a first holding arm configured to hold the first substrate in a horizontal direction; a second holding arm configured to hold the second substrate in the horizontal direction; a first detection sensor configured to detect presence/absence of the first substrate held by the first holding arm; and a second detection sensor configured to detect presence/absence of the second substrate held by the second holding arm, wherein the first detection sensor includes a sensor configured to detect the presence/absence of the first substrate, and wherein the first holding arm includes a notch formed at least at an inner end portion of a tip of the first holding arm and configured to allow the optical axis to pass therethrough.

A method of replacing an end effector for wafer handling in a semiconductor processing system includes fixing a first end effector jig to a first stage and a second end effector jig to a second stage of the load lock module; positioning a first end effector at the first end effector jig and a second end effector at the second end effector jig, the second end effector fixed relative to the first end effector; and fixing the second end effector to the second end effector jig. The first end effector is replaced with a replacement end effector and the semiconductor processing system returned to production without re-teaching placement of the replacement end effector in a processing module connected to a wafer handling module mounting the end effectors. Semiconductor processing systems and end effector jigs for replacing end effectors in semiconductor processing systems are also described.

A substrate transport system for transporting a substrate in a vacuum atmosphere includes a vacuum chamber, inside of which is configured to be capable of being set to a vacuum atmosphere, a transport arm provided inside the vacuum chamber and configured to hold and transport the substrate, a horizontal movement mechanism configured to move the transport arm in a horizontal direction inside the vacuum chamber, a horizontal duct arm mechanism including therein an accommodation portion having a normal pressure atmosphere, the horizontal duct arm mechanism being configured to be extendable/contractible as the transport arm moves horizontally, a vertical movement mechanism configured to move the transport arm in a vertical direction inside the vacuum chamber, and a vertical duct arm mechanism including therein an accommodation portion having a normal pressure atmosphere, the vertical duct arm mechanism being configured to be extendable/contractible as the transport arm moves vertically.