A substrate processing system includes a load-lock module including load-lock module stages, a process module including process module stages, a vacuum transfer module that connects the load-lock module to the process module, a first transfer device that transfers substrates from the load-lock module stages to the process module stages, the first transfer device being provided in the vacuum transfer module, a second transfer device that transfers the substrates to the load-lock module stages, and a processor. The processor is configured to perform teaching a position at which the first transfer device receives the substrates from the load-lock module, teaching a position at which the first transfer device delivers the substrates to the process module, measuring shift amounts between the process module stages and the substrates mounted thereon, and correcting positions at which the second transfer device delivers the substrates to the load-lock module stages based on the measured shift amounts.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath for liquid treating a plurality of substrates and having an accommodation space for accommodating a treating liquid; and a posture changing member for changing a posture of a substrate which is immersed in the treating liquid from a vertical posture to a horizontal posture.

A robot apparatus is configured to extend a first end effector into a first process chamber and extend a second end effector into a second process chamber. The first process chamber and the second process chamber are separated by a first pitch. The robot apparatus is further configured to retract the first end effector and the second end effector into a rectangular mainframe while maintaining a distance between the substrates bounded by the first pitch throughout a retraction process, and fold the first end effector and the second end effector inward within a sweep diameter defined by a width of the rectangular mainframe.

A wafer access assembly, a wafer access device and a wafer carrier are provided. The wafer access device includes a base, a shaft, a plurality of couple plates, a plurality of arms, and a stretchable component. The base includes a groove. The shaft extends into the groove and is capable of sliding into the groove. The plurality of couple plates mounting on the shaft. Each of the plurality of couple plates includes a plate body and a through hole on the plate body for the shaft passing through. Each of the plurality of arms is extended from an end of each of the plurality of couple plates. The stretchable component includes a plurality of connecting side walls connecting adjacent couple plates together. The plurality of stretchable component are capable of changing a distance between adjacent couple plates.

A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

There is provided a technique that includes: loading an m-th substrate into a process chamber, wherein m is an integer less than n; forming a film on the m-th substrate by heating the m-th substrate in the process chamber; unloading the m-th substrate from the process chamber; waiting for a predetermined time in the process chamber, in a state where the substrates are not present in the process chamber, after the act of unloading; loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting; and forming a film on the next substrate by heating the next substrate in the process chamber.

Apparatus and methods for automatically handling die carriers are disclosed. In one example, a disclosed apparatus includes: at least one load port each configured for loading a die carrier operable to hold a plurality of dies; and an interface tool coupled to the at least one load port and a semiconductor processing unit. The interface tool comprises: a first robotic arm configured for transporting the die carrier from the at least one load port to the interface tool, and a second robotic arm configured for transporting the die carrier from the interface tool to the semiconductor processing unit for processing at least one die in the die carrier.

A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.