There is provided a technique, which includes: a process chamber where a substrate is processed; a microwave oscillator configured to supply microwaves to the process chamber; and a controller configured to be capable of controlling the microwave oscillator to perform: a heating process where the substrate is heated with a first microwave, among the supplied microwaves, supplied at a first microwave power so that a process of supplying the first microwave during a supply time and a process of stopping the supply of the first microwave during a stop time shorter than the supply time are performed a predetermined number of times or for a first predetermined time; and a modifying process in which the substrate is supplied with a second microwave, among the supplied microwaves, at a second microwave power higher than the first microwave power for a second predetermined time while maintaining the second microwave power.

Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for rapid and repeatable movement of wafers into and out of the buffer chamber and cluster tools incorporating the buffer chambers and robots are described.

The disclosed heat-treatment furnace, used in a semiconductor-substrate heat-treatment step, is characterized by the provision of a cylindrical core, both ends of which have openings sized so as to allow insertion and removal of semiconductor substrates. This reduces standby time between batches during consecutive semiconductor heat treatment, thereby improving productivity. Furthermore, the use of a simple cylindrical shape for the structure of the core reduces the frequency at which gas-introduction pipe sections fail, thereby decreasing the running cost of the heat-treatment process.

In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of wafers into the chamber and to set the plurality of wafers on the stage. The apparatus further includes a controller configured to divide treatment time for simultaneously treating the plurality of wafers on the stage into first to K-th treatment periods where K is an integer of two or more, and to change positions of one or more of the plurality of wafers on the stage by the conveying module according to the treatment periods.

A substrate processing apparatus includes a transfer device configured to transfer at least one substrate as a processing target; a transfer controller configured to control the transfer device to perform a normal transfer of transferring the substrate and a high-accuracy transfer of transferring the substrate with higher positioning accuracy as compared to the normal transfer; a warm-up controller configured to control the transfer device to perform a warm-up operation, which is different from the normal transfer and the high-accuracy transfer, when necessary; and a necessity determination unit configured to make a determination that the warm-up operation is required as a beginning of the high-accuracy transfer is approaching when a duration of a stop state of the transfer device exceeds a preset reference time.

A substrate processing apparatus includes a carrier holding unit which holds a carrier that contains substrates, a plurality of processing units, each of which processes a substrate, a substrate transfer unit which transfers substrates between the carrier and the processing units, and a controller. The controller classifies the plurality of processing units into a plurality of groups and is programmed, when determining a processing unit that is to process a substrate, to select one of the plurality of groups, to select one processing unit belonging to the selected group, and to control the substrate transfer unit to carry a substrate into the selected processing unit.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Electronic device manufacturing apparatus and robot apparatus are described. The apparatus are configured to efficiently pick and place substrates wherein the robot apparatus includes an upper arm and three blades B1, B2, B3 that are independently rotatable. The three blades are configured to service a first dual load lock and second dual load lock wherein each dual load lock includes a different pitch. In some embodiments, a first pitch P1 is smaller than a second pitch P2. Blades B2 and B3 (or optionally blades B1 and B2) can service the first dual load lock with Pitch P1 and blades B1 and B3 can service the second dual load lock including the second pitch P2. Methods of operating the electronic device manufacturing apparatus and the robot apparatus are provided, as are numerous other aspects.

An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Provided is a transfer detection method for use in a substrate processing apparatus including a transfer arm, which has a plurality of substrate holders and is configured to transfer a plurality of substrates to a plurality of stages between a first chamber and a second chamber adjacent to the first chamber by using the plurality of substrate holders, and an optical sensor provided in a vicinity of an opening via which the first and second chambers are in communication with each other, the method including: projecting a light beam having a horizontal optical axis parallel to the opening to a position through which the substrates held by the plurality of substrate holders pass; and determining at least one of a state of the substrates on the substrate holders and a state of the transfer arm, in response to a detection result of the light beam projected from the optical sensor.