Provided are an apparatus and a method which ensure the wafers immersing in the chemical solution from one cleaning tank to the other cleaning tanks. The apparatus includes an inner tank (1001); at least one divider (1002) for dividing the inner tank (1001) into at least two cleaning tanks filled with chemical solution; a first robot (1005) equipped with at least a pair of end effectors (1051) for gripping and taking a wafer from a first cleaning tank (1011) to a second cleaning tank (1012); wherein each cleaning tank is provided with a cassette bracket (1003) in the bottom for holding wafers, and the at least one divider (1002) is provided with at least one slot (1004)< wherein the first robot (1005) grips and takes the wafer from the first cleaning tank (1011) to the second cleaning tank (1012) through the slot (1004) while keeping the wafer immersing.

A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed; a single-wafer processing section in which the substrates of the wafer lot is processed one by one; and an interface section that delivers the substrates between the batch processing section and the single-wafer processing section. The batch processing section includes: a processing bath in which the wafer lot is immersed and processed; and a first transfer device that transfers the wafer lot to the processing bath. The interface section includes: an immersion bath disposed outside a movement range of the first transfer device and that immerses the wafer lot; and a second transfer device that holds and transfers the wafer lot between the first transfer device and the immersion bath.

A substrate processing system for performing processing on a plurality of substrates. The substrate processing system comprises: a processing unit comprising a plurality of processing modules each configured to perform a predetermined process; a transfer unit having a transfer device configured to transfer a substrate to each of the plurality of processing modules; a loading/unloading unit configured to hold a plurality of substrates and load/unload a substrate to/from the processing unit; and a controller configured to control the processing unit, the loading/unloading unit, and the transfer unit. The controller controls the transfer unit to transfer to the plurality of processing modules in a serial manner a plurality of substrates that are sequentially loaded from the loading/unloading unit to the processing unit, the controller further comprises a standby mode setting unit configured to set a standby period of the substrate at an appropriate timing depending on a content of the process.

An assembled grid tray is disclosed, comprising a frame for holding multiple substrate trays to form a larger tray for use in a semiconductor processing tool. The frame may be comprised of two outer frame members that hold one or more of the trays, each with a magnet rail use with a maglev system. The frame may be further comprised of an inner frame member positioned between the outer frame members, which may also include a magnet rail, with the frame members being held in position by one or more outer beam members. The frame members may be fabricated of a material having a similar thermal expansion to trays to be placed in the frame.

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

Methods and apparatuses for depositing material onto substrates in a multi-station deposition apparatus having a first station and a second station are provided. One method may include providing a first substrate onto a first pedestal of the first station, providing a second substrate onto a second pedestal of the second station, and for a first part of a deposition process, simultaneously generating a first plasma at the first station while the first pedestal is separated by a first distance from a first showerhead of the first station, thereby depositing a first layer of material onto the first substrate, and a second plasma at the second station while the second pedestal is separated by a second distance from a second showerhead of the second station, thereby depositing a second layer of material onto the second substrate, in which the first distance is different than the second distance.

The present disclosure relates to burn-in apparatus, transfer method, burn-in chamber, and interchangeable frame thereof for semiconductor devices burn-in process. The burn-in apparatus comprises of a burn-in chamber with an incomplete base which is adapted to be completed and thermally insulated in cooperation with a thermal insulation base of at least one interchangeable frame which is adapted to be removably moved into and docked in the burn-in chamber to complete the burn-in apparatus. The burn-in apparatus comprises the burn-in chamber and at least one frame. The apparatus is complete and thermally insulated when the frame is moved into the burn-in chamber and docked therein. The apparatus is incomplete and thermally uninsulated when the frame is moved out of the burn-in chamber and undocked therefrom.

A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

A substrate transport apparatus having a drive section and at least one articulated multi-link arm having an upper arm joined at one end to the drive section and a forearm joined to the upper arm. The upper arm being a substantially rigid unarticulated link. Dual end effector links that are separate and distinct from each other are each rotatably and separately joined to a common end of the forearm about a common axis of rotation. Each end effector link has at least one holding station. The holding station of at least one end effector link includes one holding station at opposite ends of the at least one end effector link that is substantially rigid and unarticulated between the opposite ends, and the holding station at one of the opposite ends is substantially coplanar with the holding station of each other end effector link.

A wafer holder and a wafer transfer apparatus, system and method are disclosed. The wafer holder is mounted onto the wafer transfer apparatus and includes a holder body and a sucker. The holder body defines a first opening, while the sucker includes a first skirt. The first skirt is located on one side of the holder body and connected to the first opening. A groove is formed at a joint between the first skirt and the first opening. The groove is located at an outer side of the first skirt, and is able to relief stresses produced at a base portion of the sucker during deformation of the first skirt.