A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

A substrate processing apparatus includes a processing bath, a first lid member, an outer bath, a processing liquid introduction unit, a first gas supply unit, and a second gas supply unit. The processing bath stores a processing liquid in which a substrate is immersed. The first lid member covers an upper opening of the processing bath. The outer bath is provided outside of the processing bath and a processing liquid overflowing out of the processing liquid from the processing bath flows into the outer bath. The processing liquid introduction unit is able to introduce the processing liquid stored in the outer bath into the processing bath. The first gas supply unit supplies a first inert gas to the processing liquid stored in the processing bath. The second gas supply unit supplies a second inert gas into the outer bath.

With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

A substrate processing apparatus, provided with a substrate carrier support to support a substrate carrier thereon. The carrier support comprises a top support surface to support the substrate carrier; a thermally insulating body of thermally insulating material; and, a primary heater to heat the carrier support. The thermally insulating body is provided at least between the support surface and the primary heater.

The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.

Vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage, and a cassette handling mechanism. The cassette storage has a plurality of cassette storage positions and is configured to store a plurality of wafer cassettes. The cassette handling mechanism comprises a first cassette handler which is configured to transfer wafer cassettes between a first set of the cassette storage positions and the wafer transfer position. The cassette handling mechanism is provided with a second cassette handler which is configured to transfer wafer cassettes between a second set of the cassette storage positions and the wafer transfer position.

A substrate processing apparatus includes a load port, a load lock chamber, a processing module, a substrate transport mechanism, and a controller. The substrate transport mechanism includes a plurality of substrate holders, each of which is configured hold one substrate. The controller is configured to control, when the processing module is configured to process one substrate at a time, the substrate transport mechanism such that a first substrate holder transports the substrate between the load port and the processing module and a second substrate holder transports the substrate between the load lock chamber and the processing module. The controller is further configured to control, when the processing module is configured to simultaneously process the plurality of substrates, the substrate transport mechanism such that the plurality of substrate holders simultaneously transport the plurality of substrates between the load port, the load lock chamber, and the processing module.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner; (b) repeatedly performing a set including: (b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and (b-2) charging one or more of the substrates into the one or more of the slots; and (c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.

There is provided a technique that includes: an exhaust line including a second pressure regulation valve; a bypass line including a first pressure regulation valve; and a pressure control controller configured to control the first pressure regulation valve and the second pressure regulation valve, and configured to: adjust an opening degree of the first pressure regulation valve to reduce a pressure in a process chamber from an atmospheric pressure to a second predetermined pressure; adjust the opening degree of the first pressure regulation valve to maintain the second predetermined pressure; adjust the opening degree of the first pressure regulation valve to reduce the pressure to a first predetermined pressure; detect the pressure; adjust an opening degree of the second pressure regulation valve to reduce the pressure to a third predetermined pressure; and adjust the opening degree of the second pressure regulation valve to maintain a processing pressure.