According to one aspect of the present disclosure, there is provided a technique that includes: a substrate retainer; a reaction tube; a heater configured to heat an inside of the reaction tube; a gas supplier configured to supply a process gas to substrates accommodated in the reaction tube; an exhauster configured to exhaust the process gas from the inside of the reaction tube; a temperature detector configured to measure an inner temperature of the reaction tube; a reflectance detector configured to measure a reflectance of a film formed by supplying the process gas through the gas supplier; and a controller configured to be capable of performing a feedback control of film-forming conditions on the substrates accommodated in the reaction tube by using temperature information measured by the temperature detector and reflectance information measured by the reflectance detector.

Described herein is a technique capable of suppressing adhesion of by-products to a furnace opening portion. A substrate processing apparatus includes: a reaction vessel having an opening at a lower end and accommodating a substrate retainer; a shaft rotatably supporting the substrate retainer; a cap including: a side surface portion having a predetermined gap with an inner surface of the reaction vessel; a cylindrical portion through which the shaft is inserted; an upper plate portion of an annular shape; and a flange connected to a lower end of the side surface portion; and a cap cover connected to the shaft above the upper end of the cylindrical portion. A purge gas from thereunder flows sequentially to a space between the shaft and the cylindrical portion, a space between the upper plate portion and the cap cover and a space between the side surface portion and the cap cover.

Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction chamber in which a substrate is processed; a lid configured to close a furnace opening of the reaction chamber; a base provided below the lid; and a connector provided to connect the lid and the base. The connector includes: a shaft provided at the lid; an elastic structure provided to surround the shaft and configured to hold the lid; a cap provided to surround the elastic structure and provided at the base; a fixing block provided below the cap; and a moving block held by a holder provided between the fixing block and the shaft.

A vertical batch furnace assembly for processing wafers having a cassette handling space, a wafer handling space, and a first wall and separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which, at a side of the first wall which is directed to the cassette handling space, a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage having a plurality of cassette storage positions and a cassette handler configured to transfer wafer cassettes between the cassette storage positions and the wafer transfer position. The cassette handler has a first cassette handler arm and a second cassette handler arm.

A substrate processing method includes a first processing step of processing a substrate using phosphoric acid set to a first temperature in a processing tank, and a second processing step of processing the substrate using phosphoric acid set to a second temperature in the processing tank.

In a vacuum processing device, a loading/unloading port, a normal pressure transfer chamber and a vacuum transfer chamber are arranged in that order from a front side toward a rear side, and load-lock chambers are connected to the normal pressure transfer chamber. The position in the front-rear direction in a movement range of a wafer W in the normal pressure transfer chamber overlaps with the positions in the front-rear direction of the load-lock chambers. Three vacuum processing modules are connected to each of the left and right sides of the vacuum transfer chamber. Vacuum processing units are arranged in each of the vacuum processing modules in a front-rear direction when viewed from the vacuum transfer chamber side. Wafer mounting shelves for holding wafers W in the load-lock chambers are arranged in the front-rear direction when viewed from the vacuum transfer chamber side.

A substrate transport system for transporting a substrate in a vacuum atmosphere includes a vacuum chamber, inside of which is configured to be capable of being set to a vacuum atmosphere, a transport arm provided inside the vacuum chamber and configured to hold and transport the substrate, a horizontal movement mechanism configured to move the transport arm in a horizontal direction inside the vacuum chamber, a horizontal duct arm mechanism including therein an accommodation portion having a normal pressure atmosphere, the horizontal duct arm mechanism being configured to be extendable/contractible as the transport arm moves horizontally, a vertical movement mechanism configured to move the transport arm in a vertical direction inside the vacuum chamber, and a vertical duct arm mechanism including therein an accommodation portion having a normal pressure atmosphere, the vertical duct arm mechanism being configured to be extendable/contractible as the transport arm moves vertically.

There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.

A substrate processing module includes a first tank and a second tank that are arranged in a first direction and in which a substrate can be arranged, a first conveyor that moves the substrate in the first direction, and a second conveyor that moves the substrate in a second direction intersecting the first direction; and a vertical conveyor that is connected to the first conveyor and vertically moves the substrate, wherein a first actuator of the first conveyor and a second actuator of the second conveyor are respectively arranged in drive spaces separated from a processing space accessible to the first tank and the second tank.