Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

There is provided a substrate processing apparatus, including: a cylindrical reaction tube having a lower end opening; a lid configured to open and close the lower end opening of the reaction tube; a substrate holder mounted on the lid and configured to hold a plurality of substrates at vertical intervals in multiple stages; and an inner tube mounted on the lid and configured to cover the substrate holder.

An apparatus for manufacturing a semiconductor device includes a boat configured to support a plurality of stacked substrates, a first tube surrounding the boat in a lateral direction and having a cylindrical shape with an upper portion thereof being open, and a cleaning gas supply nozzle extending from an outer portion of the first tube to a portion between an interior sidewall of the first tube and the boat. The cleaning gas supply nozzle may include a first segment extending from the outer portion of the first tube to an inner portion of the first tube, a second segment extending in a lengthwise direction of the first tube from an end of the first segment, and a third segment extending in a direction differing from the extension direction of the second segment from an end of the second segment.

Disclosed is a substrate treating apparatus that performs treatment on a substrate. The apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates, a posture turning unit configured to turn a posture of the substrates on which the treatment is performed by the batch-type processing unit to horizontal, a first transport unit configured to transport the substrates from the batch-type processing unit to the posture turning unit, a second transport unit configured to transport the substrates, turned to horizontal by the posture turning unit, to the single-wafer-type processing unit, and an immersion tank in which the substrates are immersed in deionized water before the posture is turned by the posture turning unit.

Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

The present invention relates to a wafer cleaning device which can prevent a cleaning solution from leaking and enables prompt treatment. The present invention provides a wafer cleaning device comprising: a cleaning bath which receives a cleaning solution and from which the cleaning solution overflows according to the dipping of wafers; a plurality of lift parts arranged at the outside of the cleaning bath and dipping the cassette into the cleaning solution in the cleaning bath; an external water tank having the cleaning bath and the lift parts received therein and including a drain hole through which the cleaning solution is drained; and a tray which can be detachably attached to the inner bottom surface of the external water tank and collects the cleaning solution to guide same to the drain hole.

A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and an internal wall separating the cassette handling space and the wafer handling space. The cassette handling space is provided with a cassette storage configured to store a plurality of wafer cassettes provided with a plurality of wafers. The cassette handling space is also provided with a cassette handler configured to transfer wafer cassettes between the cassette storage and a wafer transfer position. The wafer handling space is provided with a wafer handler configured to transfer wafers between a wafer cassette in the wafer transfer position and a wafer boat in a wafer boat transfer position. The internal wall is provided with a wafer transfer opening adjacent the wafer transfer position for a wafer cassette from or to which wafers are to be transferred. The cassette storage comprises two cassette storage carousels.

A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and an internal wall separating the cassette handling space and the wafer handling space. The cassette handling space is provided with a cassette storage configured to store a plurality of wafer cassettes. The cassette handling space is also provided with a cassette handler configured to transfer wafer cassettes between the cassette storage and a wafer transfer position. The wafer handling space is provided with a wafer handler configured to transfer wafers between a wafer cassette in the wafer transfer position and a wafer boat. The internal wall is provided with a wafer transfer opening adjacent the wafer transfer position for a wafer cassette from or to which wafers are to be transferred. The cassette storage comprises a cassette storage carousel with a diameter between 1.1 and 1.6 meter.

A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The wall having a wafer transfer opening. The wafer transfer opening is associated with a cassette carrousel comprising a carrousel stage having a plurality of cassette support surfaces each configured for supporting a wafer cassette. The carrousel stage is rotatable by an actuator around a substantially vertical axis to transfer each cassette support surface to a wafer transfer position in front of the wafer transfer opening and to at least one cassette load/retrieve position, wherein the vertical batch furnace assembly is configured to load or retrieve a wafer cassette on or from a cassette support surface of the carousel stage which is in the at least one load/retrieve position.

Vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage, and a cassette handling mechanism. The cassette storage has a plurality of cassette storage positions and is configured to store a plurality of wafer cassettes. The cassette handling mechanism comprises a first cassette handler which is configured to transfer wafer cassettes between a first set of the cassette storage positions and the wafer transfer position. The cassette handling mechanism is provided with a second cassette handler which is configured to transfer wafer cassettes between a second set of the cassette storage positions and the wafer transfer position.