Wafer boat handling device, configured to be positioned under a process chamber of a vertical batch furnace, and comprising a rotatable table comprising a first and a second wafer boat support surface. Each wafer boat support surface is configured for supporting a wafer boat. The rotatable table is rotatable by an actuator to rotate both the first and the second wafer support surfaces to a load/receive position in which the wafer boat handling device is configured to load a wafer boat vertically from the rotatable table into the process chamber and to receive the wafer boat from the process chamber onto the rotatable table, a cooldown position in which the wafer boat handling device is configured to cool down a wafer boat, and a transfer position for transferring wafers to and/or from the wafer boat.

A wafer boat handling device, configured to be positioned under a process chamber of a vertical batch furnace. The wafer boat handling device comprises a main housing having a wall defining and bounding a wafer boat handling space, and a boat transporter comprising a wafer boat support for supporting a wafer boat and configured to transport the wafer boat to a cooldown position within the wafer boat handling space. A part of the wall adjacent the cooldown position is a wall part with a heat radiation surface absorptance of at least 0.60 so as to withdraw heat from the wafer boat which is in the cooldown position by means of heat radiation absorption.

A technique for improving stability and safety at the time of boat transfer is provided. A reaction tube configured to process a substrate, a seal cap, provided on an upper surface thereof with a substrate retainer for retaining the substrate, configured to close a furnace opening of the reaction tube, one of a first elevator and a second elevator configured to elevate the seal cap; and another of a first elevator and a second elevator configured to assist the one of the first elevator and the second elevator in elevating the seal cap.

A thermal process device for heat treating a product or plurality of products includes a thermal processing chamber having opposed distal ends and at least one controllable heating zone. At least one buffer zone disposed is at each of the distal ends, the buffer zones and at least one heating zone of the thermal processing chamber forming a heating element assembly having an inner and outer surface. At least one layer of insulating material is disposed along the at least one buffer and heating zones of the thermal processing chamber and forming part of the heating element assembly, the at least one layer of insulating material having a controlled efficiency being applied non-uniformly across an axial length of the heating assembly.

In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.

A wafer boat configured to be placed on a pedestal of a vertical batch furnace, the pedestal having a substantially flat support surface. The wafer boat comprises a support ring defining a substantially flat bottom end surface of the wafer boat, and an alignment ring substantially concentric with the support ring. Either the support surface of the pedestal, or a bottom side of the alignment ring is provided with a plurality of alignment elements respectively protruding upwards from the support surface or downwards from the alignment ring, while the other one is provided with a plurality of alignment openings configured to accommodate therein the plurality of alignment elements. The support ring downwardly protrudes beyond the alignment ring so that, when the wafer boat is placed on the pedestal, the support ring is supported on the support surface while the alignment ring is spaced from the support surface of the pedestal.

A substrate processing apparatus includes a processing section that performs a batch process to a plurality of substrates. A first substrate transport mechanism removes one of substrates contained in a substrate container placed on a stage, and transport the substrate to a position adjusting unit, in which the position of the substrate in the rotating direction of the substrate is adjusted, and transports the substrate back to the substrate container. Then a second substrate transport mechanism collectively removes from the substrate container the substrates whose positions in the rotating direction have been adjusted by the position adjusting unit.

The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same. The substrate processing apparatus in accordance with an exemplary embodiment includes a pre-chamber into a substrate is carried, a process chamber communicating with the pre-chamber and in which a substrate processing process is performed, a substrate boat including a plurality of partition plates that partition a loading space into which the substrate is loaded and to elevate, a gas supply unit configured to supply a process gas to the substrate through a plurality of injection nozzles provided in the process chamber, an exhaust unit configured to exhaust a gas through a plurality of suction holes defined in the process chamber, and a swap guide member provided in the pre-chamber and configured to place the substrate carried into the pre-chamber in the loading space that is partitioned by the plurality of partition plates.

Described herein is a technique capable of reducing a difference in processing results between substrates. According to one aspect of the technique, there is provided a reaction tube having a process chamber; a gas introduction portion provided at a lower end; a first supplier provided along a side surface to face a substrate processing region; and a preheating portion provided lower than the substrate processing region, the preheating portion including: a first preheating portion extending in a direction from the gas introduction portion toward a ceiling; and a second preheating portion extending in a direction perpendicular to the above direction, wherein the preheating portion connects the gas introduction portion with the first supplier by combining the first preheating portion and the second preheating portion.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.