According to the present disclosure, there is provided a technique capable of improving a strength of a substrate retainer. According to one aspect of the technique of the present disclosure, there is provided a substrate retainer including: annular structures arranged at predetermined intervals; support columns configured to support the annular structures and provided along outer edges of the plurality of annular structures, wherein a width of each of the support columns is smaller than a width of each of the annular structures; support structures extending from the support columns toward a radially inward direction and configured to support a substrate between two adjacent annular structures; and connecting structures welded to at least one of the support columns and to the annular structures so as to connect the at least one of the support columns with the annular structures.

Apparatus and methods for automatically handling die carriers are disclosed. In one example, a disclosed apparatus includes: at least one load port each configured for loading a die carrier operable to hold a plurality of dies; and an interface tool coupled to the at least one load port and a semiconductor processing unit. The interface tool comprises: a first robotic arm configured for transporting the die carrier from the at least one load port to the interface tool, and a second robotic arm configured for transporting the die carrier from the interface tool to the semiconductor processing unit for processing at least one die in the die carrier.

A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

There is provided a technique that includes: a gate valve including a movable gate valve plate; and a butterfly valve that is installed at the gate valve plate, has a diameter smaller than those of valve openings configured to be opened or closed by the gate valve plate, and is configured to be capable of being fully closed, wherein the gate valve plate of the gate valve and the butterfly valve are configured to be capable of being driven independently of each other.

A semiconductor processing tool may include a processing tank. The semiconductor processing tool may include an arm arranged to hold a plurality of wafers over the processing tank such that wafers in the plurality of wafers are horizontally stacked over the processing tank. The semiconductor processing tool may include a fan arranged over the arm to permit an airflow to be provided across surfaces of the wafers in a vertical direction toward the processing tank. The semiconductor processing tool may include an exhaust system including at least one exhaust output and one or more exhaust pipe segments arranged substantially around the processing tank and connected to the at least one exhaust output. The one or more exhaust pipe segments may include a plurality of openings to receive exhaust air to be provided to the at least one exhaust output.

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

A substrate processing device according to the present embodiment includes a processing tank configured to be capable of accumulating a liquid. A conveyer can array a plurality of semiconductor substrates in such a manner that front surfaces of the semiconductor substrates face a substantially horizontal direction, and transport the semiconductor substrates into the processing tank. A plurality of liquid suppliers can supply the liquid toward an inside of the processing tank from a lower portion of the processing tank. A plurality of current plates are arranged on at least either one end side or the other end side of an array of the semiconductor substrates. The current plates are provided in a first gap region above the semiconductor substrates in gaps between the conveyer and a sidewall of the processing tank on both sides of the conveyer as viewed from an array direction of the semiconductor substrates.

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

A substrate processing apparatus includes: a chamber that accommodates a boat; a transfer mechanism that is provided inside the chamber, and transfers a substrate; a first camera that captures an image of a support column of the boat and the substrate; a support member that is inserted through an opening formed in a wall surface of the chamber, and supports the first camera; and a driver that drives the support member in order to move the first camera between a standby position and a measurement position.