A substrate-floatation-type laser processing apparatus and a method for measuring a floating height, capable of improving performance of laser processing are provided. A substrate-floatation-type laser processing apparatus according to an embodiment includes a stage configured to float and convey a substrate, and a floating-height measurement apparatus configured to measure a floating height H of the substrate. Note that a distance between the floating-height measurement apparatus and the substrate can be automatically adjusted according to the measured floating height H. The floating height H of the substrate is measured by applying laser light to the substrate and the stage. The distance between the floating-height measurement apparatus and the substrate is adjusted by using a feedback mechanism in which the measured floating height of the substrate is used as an input.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

An apparatus is disclosed for transferring a pattern of a composition containing particles of an electrically conductive material and a thermally activated adhesive from a surface of a flexible web to a surface of a substrate. The apparatus comprises: respective drive mechanisms for advancing the web and the substrate to a nip through which the web and the substrate pass at the same time and where a pressure roller acts to press the surfaces of the web and the substrate against one another, a heating station for heating at least one of the web and the substrate prior to, or during, passage through the nip, to a temperature at which the adhesive in the composition is activated, a cooling station for cooling the web after passage through the nip, and a separating device for peeling the web away from the substrate after passage through the cooling station, to leave the pattern of composition adhered to the surface of the substrate.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.

An active energy radiation unit includes a light source which radiates ultraviolet rays onto a target object, and a main gas supply mechanism which is disposed to be adjacent to the light source and ejects an inert gas. The main gas supply mechanism includes a receiving part which receives nitrogen gas, a first ejection port which is provided at a position between the receiving part and the light source in a transfer direction and closer to the target object than the receiving part and a second ejection port which is provided between the receiving part and the first ejection port in the transfer direction.

Embodiments disclosed herein generally include annealing chambers. The annealing chambers allow for high throughput without sacrificing wafer-to-wafer and within wafer uniformity. The annealing chamber includes a transport system, a substrate carrier, and a plurality of thermal sources. The transport system is magnetically coupled to the substrate carrier. The transport system moves the substrate carrier along a path. A substrate supported by the substrate carrier is annealed by the thermal sources. The annealing chamber described herein allows for a higher throughput of substrate (alternatively referred to as a wafer) annealing compared to furnace annealing chambers.

In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.