Wafer chucks or baseplates therefor are disclosed that feature thermal tuning cavity features that are positioned and sized so as to provide a more uniform temperature distribution across a wafer support surface of such a wafer chuck. Each thermal tuning cavity feature may be positioned adjacent to a portion or portions of a heat exchange passage or passages within a baseplate of the wafer chuck. By locating thermal tuning cavity features in locations underneath where the wafer support surface of the wafer chuck would otherwise demonstrate localized regions of lower temperature (as compared with adjacent regions of the wafer chuck support surface), the lower-temperature regions may be caused to have elevated temperatures that more closely match the surrounding temperatures, thereby increasing temperature uniformity.

A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

A semiconductor manufacturing apparatus includes an electrostatic chuck that attracts a workpiece including a substrate. The electrostatic chuck includes an attraction surface that includes a first region and a second region surrounding the first region; and an internal electrode superimposed on each of the first region and the second region in a first direction crossing the attraction surface. The first region has a first depth in the first direction with respect to the attraction surface and includes a first recessed portion superimposed on the internal electrode in the first direction. The second region has a second depth smaller than the first depth in the first direction with respect to the attraction surface and includes a second recessed portion superimposed on the internal electrode in the first direction.

Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Implementations described herein provide a substrate support assembly. The substrate support assembly has a first ceramic plate having a workpiece supporting surface and a bottom surface. The first ceramic plate has a plurality of secondary heaters each forming a plurality of micro zones. The substrate support assembly has a second ceramic plate having an upper surface and a lower surface. A first metal bonding layer is disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate. A third ceramic plate has a top portion and a bottom portion. The third ceramic plate has primary heaters. A second metal bonding layer is disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

Embodiments of the present disclosure generally relate to methods and apparatus for processing substrates. More specifically, embodiments of the present disclosure relate to transfer apparatus and substrate-supporting members. In an embodiment, an apparatus for transferring a substrate is provided. The apparatus includes a hub and a plurality of transfer arms extending from the hub. The apparatus further includes a plurality of substrate-supporting members, wherein each of the transfer arms has a first end coupled to the hub and a second end coupled to a respective one of the plurality of substrate-supporting members. The apparatus further includes a first electrical interface connection for electrostatically chucking a substrate and located at a first position on each substrate-supporting member, and a second electrical interface connection for electrostatically chucking the substrate and located at a second position on each substrate-supporting member. Substrate processing modules are also described.

Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.